کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
753338 895515 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analytical model of short-channel gate enclosed transistors using Green functions
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Analytical model of short-channel gate enclosed transistors using Green functions
چکیده انگلیسی

Enclosed-layout transistors fabricated in standard CMOS processes are known to offer a natural robustness against radiation effects, a characteristic which is boosted in submicron technologies due to the reduction of the oxide thickness. In this paper, a thorough analytical I–V model of short-channel polygonal enclosed-layout transistors is proposed, addressing the issues of drain-induced barrier lowering and threshold voltage roll-off due to short-channel effects. Experimental data is reported, showing good agreement with the theoretical model.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 53, Issue 5, May 2009, Pages 514–519
نویسندگان
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