Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution

This work proposes a planar fully depleted “folded” technology integrated on bulk substrate as an innovative solution for upcoming low power nodes to enhance drive current on narrow devices. We report a detailed fabrication method, combining advanced selective epitaxy faceting and SON (Silicon-On-Nothing) process, to provide ultra thin body and buried oxide (UTB2) devices with improved drive current Ion for a given designed footprint Wdesign when scaling the device width. We compare the fabrication and electrical behavior between 〈1 1 0〉 channel, i.e. 0°-rotated wafer, and 〈1 0 0〉 channel, i.e. 45°-rotated wafer, for the same (1 0 0) surface orientation.