کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10129048 | 1645163 | 2019 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of thermal annealing on structural and magnetic properties of Mn ions implanted AlInN/GaN films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In the search of functional diluted magnetic semiconductors, a study of effects of Mn ions implantation on structural and magnetic properties of AlInN/GaN/sapphire films is reported. Mn ions at 200â¯keV were implanted into the layers at three doses 5â¯Ãâ¯1014â¯cmâ2, 5â¯Ãâ¯1015â¯cmâ2 and 5â¯Ãâ¯1016â¯cmâ2. The as-implanted samples were thermally annealed and investigated by using X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS) and vibrating sample magnetometry (VSM). The structural analysis of the samples indicated that the sample implanted at dose of 5â¯Ãâ¯1014â¯cmâ2 and thermally annealed at 750â¯Â°C exhibited good crystalline recovery. The ferromagnetism of the samples was investigated by recording magnetization as a function of applied magnetic field. The magnetic characterizations exhibited well shaped hysteresis at room temperature which indicates presence of high temperature ferromagnetism in the samples. The findings of this work pointed out that AlInN/GaN samples implanted with Mn ions at dose of 5â¯Ãâ¯1016â¯cmâ2 and annealing at 750â¯Â°C exhibited maximum magnetization. On the basis of first principles calculations, it is predicted that p-d interaction is the mechanism of ferromagnetic ordering in the material.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 469, 1 January 2019, Pages 618-622
Journal: Journal of Magnetism and Magnetic Materials - Volume 469, 1 January 2019, Pages 618-622
نویسندگان
Abdul Majid, Salah Ud-Din Khan, Sajjad Haider, J.J. Zhu,