کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10670143 | 1008853 | 2011 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High deposition rate hydrogenated polymorphous silicon characterized by different capacitance techniques
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
High deposition rate hydrogenated polymorphous silicon thin films were analyzed using different capacitance techniques. The distribution of localized states and some electrical properties were studied by the temperature, frequency and bias dependence of the Schottky barrier capacitance and deep level transient spectroscopy. Our different samples present different groups of gap states depending on the preparation conditions. A comparison with standard amorphous silicon films reveals a reduced density of states in the gap for high deposition rate samples. Our results show that the samples, which represent only one group of gap states and lower density of states in the gap, were the samples grown at deposition rate of 8Â Ã
/s.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 16, 1 June 2011, Pages 5364-5370
Journal: Thin Solid Films - Volume 519, Issue 16, 1 June 2011, Pages 5364-5370
نویسندگان
R. Darwich, P. Roca i Cabarrocas,