Current transport mechanisms in Ru/Pd/n-GaN Schottky barrier diodes and deep level defect studies

► The current transport mechanisms in Ru/Pd/n-GaN SBD have been investigated. ► The calculated BH and ideality factor are 0.27 eV and 3.93 at 105 K, and 0.75 eV and 1.29 at 405 K. ► The linearity of the BH vs 1/2kT plot yields a mean BH of 0.89 eV and a standard deviation of 111 mV. ► The calculated interface state densities are in the range of 9.38 × 1013 to 1.06 × 1012 eV−1 cm−2. ► Two deep level defects are observed in as-grown GaN layer (E1 = 0.54 eV and E2 = 0.68 eV).