Keywords: تراکم حالت رابط; Resistive switching; Breakdown; Work function; Interface state density
مقالات ISI تراکم حالت رابط (ترجمه نشده)
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Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2
Keywords: تراکم حالت رابط; In- situ NH3 plasma passivation; Interface state density; GaN MOSCAP;
Surface chemical states, electrical and carrier transport properties of Au/ZrO2/n-GaN MIS junction with a high-k ZrO2 as an insulating layer
Keywords: تراکم حالت رابط; Zirconium oxide; N-type GaN; Insulating layer; MS and MIS junctions; Electrical properties; Interface state density; Reverse leakage current mechanism;
Microstructural, chemical states and electrical properties of Au/CuO/n-InP heterojunction with a cupric oxide interlayer
Keywords: تراکم حالت رابط; Cupric oxide; Structural and chemical properties; n-InP; Heterojunction; Electrical properties; Interface state density; Current conduction mechanism;
Detailed study of SiOxNy:H/Si interface properties for high quality surface passivation of crystalline silicon
Keywords: تراکم حالت رابط; Surface passivation; PECVD; Silicon oxynitride; NH bonds; Interface state density;
Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics
Keywords: تراکم حالت رابط; Al2O3/Si interface; High-k; Metal/insulator/semiconductor (MIS); Numerical simulation; Interface state density; C-V characteristics;
Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer
Keywords: تراکم حالت رابط; High-k rare-earth samarium oxide; n-type GaN; Metal-insulator-semiconductor junction; Electrical properties; Interface state density; Current transport mechanisms;
Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities
Keywords: تراکم حالت رابط; Silicon oxide; Tunnel oxide; Surface photo voltage measurement; Photoemission; Interface state density; Rapid thermal oxidation; Wet-chemical oxidation; Oxidation states;
Microstructural and electrical properties of Al/n-type Si Schottky diodes with Au-CuPc nanocomposite films as interlayer
Keywords: تراکم حالت رابط; Nanocomposite; Au-CuPc; Schottky contact; Barrier height; Interface state density; Optical band gap;
Effects of high-k zirconium oxide (ZrO2) interlayer on the electrical and transport properties of Au/n-type InP Schottky diode
Keywords: تراکم حالت رابط; High-k zirconium oxide; N-InP; Metal-insulator-semiconductor diode; Electrical properties; Interface state density; Current conduction mechanisms;
Modification of electrical properties of Au/n-type InP Schottky diode with a high-k Ba0.6Sr0.4TiO3 interlayer
Keywords: تراکم حالت رابط; High-k Ba0.6Sr0.4TiO3 insulating layer; n-type InP; MIS diode; Electrical properties; Interface state density; Carrier transport mechanisms;
Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(0Â 0Â 1) for high-power MOSFET applications
Keywords: تراکم حالت رابط; Electrical properties; 3C-SiC; Interface state density; XRD; AFM;
Analysis of inhomogeneous barrier and capacitance parameters for Al/rubrene/n-GaAs (100) Schottky diodes
Keywords: تراکم حالت رابط; Rubrene thin film; Spin coating; Gaussian distribution; Mean barrier height; Interface state density
Effect of thermal annealing on the electrical and structural properties of Au/Y/p-type InP Schottky structure
Keywords: تراکم حالت رابط; Schottky structure; p-InP; Barrier heights; Interface state density; Auger electron microscopy; X-ray diffraction
Effect of copper phthalocyanine (CuPc) interlayer on the electrical characteristics of Au/n-GaN Schottky rectifier
Keywords: تراکم حالت رابط; GaN; Schottky contact; CuPc; Interface state density
Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n-type InP
Keywords: تراکم حالت رابط; n-type InP; Ru/Ti metallization scheme; Electrical properties; Interface state density; X-ray diffraction; Atomic force microscopy
Analysis of device parameters for Au/tin oxide/n-Si(1 0 0) metal–oxide–semiconductor (MOS) diodes
Keywords: تراکم حالت رابط; Tin oxide thin film; Spray deposition; MOS diode; Ideality factor; Barrier height; Interface state density
Effect of oxygen plasma treatment on the electrical properties in Ag/bulk ZnO Schottky diodes
Keywords: تراکم حالت رابط; O-Polar bulk ZnO; Oxygen plasma; Interface state density;
Effect of thin gold interlayer on the electrical and dielectrical behaviors of ITO/MEH-PPV/Al structures
Keywords: تراکم حالت رابط; MEH-PPV; I(V); Interface state density
Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer
Keywords: تراکم حالت رابط; Current-voltage characteristics; Capacitance-voltage characteristics; Gold; Polyvinylidene fluoride; Indium phosphide; Schottky diodes; Interface state density; Poole-Frenkel emission;
Effect of annealing on the electrical and interface properties of Au/PVC/n-InP organic-on-inorganic structures
Keywords: تراکم حالت رابط; Electrical properties; n-Type InP; Au/PVC Schottky contact; Series resistance; Interface state density
Modified electrical characteristics of Pt/n-type Ge Schottky diode with a pyronine-B interlayer
Keywords: تراکم حالت رابط; Germanium; Schottky contact; Surface potential; Interface state density; Reverse leakage mechanism
Electrical and structural properties of tungsten Schottky contacts to p-type InP at different annealing temperatures
Keywords: تراکم حالت رابط; InP; W Schottky contacts; Annealing effects; Interface state density; Depth profiles; X-ray diffraction;
Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements
Keywords: تراکم حالت رابط; Silicon interfaces; Wet-chemical oxidation; Hydrogen (H) termination; Surface photovoltage measurements; Interface state density; Recombination loss;
Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties
Keywords: تراکم حالت رابط; Germanium; MOSFETs; Interface; Interface state density; Mobility;
Electrically active interface defects in the In0.53Ga0.47As MOS system
Keywords: تراکم حالت رابط; High-k; InGaAs; Interface state density; CV analysis; Surface n-channel InGaAs MOSFETs; Maserjian Y-function;
Capacitance-frequency (C-f) and conductance-frequency (G-f) characteristics of Ir/n-InGaN Schottky diode as a function of temperature
Keywords: تراکم حالت رابط; C-f and G-f characteristics; Ir Schottky contacts; n-type InGaN; Interface state density; Series resistance-frequency characteristics;
Electrical properties and interface state energy distributions of Cr/n-Si Schottky barrier diode
Keywords: تراکم حالت رابط; MS contacts; Series resistance; Interface state density; Surface potential; Electrical properties;
Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer
Keywords: تراکم حالت رابط; AlGaN/GaN device; Schottky barrier diode; Turn-on voltage; Interface state density; Surface treatment; Oxygen annealing;
Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layers
Keywords: تراکم حالت رابط; Germanium on insulator; Ultra-thin BOX; Al2O3; Wafer bonding; Interface state density
Frequency dependent series resistance and interface states in Au/bio-organic/n-GaN Schottky structures based on DNA biopolymer
Keywords: تراکم حالت رابط; Schottky contact; n-Type GaN; DNA; Biopolymer; Frequency dependence; Series resistance; Interface state density
La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode
Keywords: تراکم حالت رابط; La2O3; High-k/InGaAs; Capacitor; Metal gate; Interface reaction; Interface state density
Frequency dependent interface state properties of a Schottky device based on perylene-monoimide deposited on n-type silicon by spin coating technique
Keywords: تراکم حالت رابط; Organic semiconductor; Perylene-monoimide; Schottky device; Current–voltage; Capacitance–voltage; Conductance–voltage; Series resistance; Interface state density
Electrical and photosensing performance of heterojunction device based on organic thin film structure
Keywords: تراکم حالت رابط; Aluminum phthalocyanine chloride; N,N′-dioctyl-3,4,9,10-perylenedicarboximide; Photovoltaic; Photoresponse; Interface state density; Electrical properties
Effect of annealing on the electronic parameters of Au/poly(ethylmethacrylate)/n-InP Schottky diode with organic interlayer
Keywords: تراکم حالت رابط; I–V and C–V characteristics; Au/PEMA/n-InP Schottky diode; Series resistance; Interface state density
Synthesis, characterization and dielectric properties of novel axial coumarin-substituted titanium(IV) phthalocyanines
Keywords: تراکم حالت رابط; Titanium phthalocyanine; Coumarin; Dielectric; Metal–insulator–semiconductor structure; Impedance; Interface state density; Fluorescence
Electrical and structural properties of Ir/Ru Schottky rectifiers on n-type InGaN at different annealing temperatures
Keywords: تراکم حالت رابط; Electrical and structural properties; Ir/Ru Schottky contacts; n-Type InGaN; Interface state density; Auger electron spectroscopy; X-ray diffraction
Performance improvement mechanisms of i-ZnO/(NH4)2Sx-treated AlGaN MOS diodes
Keywords: تراکم حالت رابط; Band offset; Charge neutrality level model; Interface state density; (NH4)2Sx surface treatment; Vapor cooling condensation system; X-ray photoelectron spectroscopy;
Improvement of Al2O3/Ge interfacial properties by O2-annealing
Keywords: تراکم حالت رابط; Gate stack structure; Aluminum oxide; Germanium; Oxygen annealing; Interface state density
Formation of SiO2/Si structure with low interface state density by atmospheric-pressure VHF plasma oxidation
Keywords: تراکم حالت رابط; SiO2/Si structure; Atmospheric-pressure plasma; Plasma oxidation; Interface state density
Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structure
Keywords: تراکم حالت رابط; Electrical properties; n-Type InP; Au/polyvinyl alcohol/n-InP; Schottky structure; Rapid thermal annealing; Interface state density
Electrical transport properties of Au/SiO2/n-GaN MIS structure in a wide temperature range
Keywords: تراکم حالت رابط; Temperature-dependent electrical properties; Metal-insulator-semiconductor structure; n-Type GaN; Interface state density
Current transport mechanisms in Ru/Pd/n-GaN Schottky barrier diodes and deep level defect studies
Keywords: تراکم حالت رابط; Schottky barrier diodes; I-V and C-V characteristics; Gaussian distribution; Interface state density; Deep level transient spectroscopy;
Electrical and photoconductivity properties of p-Si/P3HT/Al and p-Si/P3HT:MEH-PPV/Al organic devices: Comparison study
Keywords: تراکم حالت رابط; P3HT and MEH-PPV organic semiconductors; I-V and C-V measurements; Interface state density; Organic Schottky diode; Rectification ratio; Photoconductivity properties;
Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques
Keywords: تراکم حالت رابط; High-k; InGaAs; Interface state density; Bulk trap; Frequency dispersion
Control of interfacial properties of Pr-oxide/Ge gate stack structure by introduction of nitrogen
Keywords: تراکم حالت رابط; Ge; Pr-oxide; Radical nitridation; Interface state density
Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO2/n-GaN metal–insulator–semiconductor structures
Keywords: تراکم حالت رابط; Electrical characteristics; Metal–semiconductor; Metal–insulator–semiconductor; Interface state density; DLTS measurements; n-Type GaN
Extraction of the device parameters of Al/P3OT/ITO organic Schottky diode using J–V and C–V characteristics
Keywords: تراکم حالت رابط; P3OT; Al/P3OT/ITO organic Schottky diodes; XRD and SEM; J–V and C–V characteristics; Series resistance; Interface state density
Formation processes of Ge3N4 films by radical nitridation and their electrical properties
Keywords: تراکم حالت رابط; Ge MOS; Ge3N4; Radical nitridation; Pr-oxide; Atomic layer deposition; Interface state density; X-ray photoelectron spectroscopy
Electrical characteristics of an organic thin copolymer/p-Si Schottky barrier diode
Keywords: تراکم حالت رابط; Ideality factor; Organic thin copolymer; Schottky barrier height; Series resistance; Interface state density