Analysis of device parameters for Au/tin oxide/n-Si(1 0 0) metal–oxide–semiconductor (MOS) diodes

In present paper, the device parameters of tin oxide/n-Si(1 0 0) structure have been determined by means of capacitance–voltage (C–V) and conductance–voltage (G–V) measurements between 500 Hz and 1 MHz and current–voltage (I–V) measurements between −2 and +3 V at 300 K. This device has denoted good rectifying behavior and the I–V data could be described by thermionic emission (TE) technique. The values of ideality factor (n  ) and barrier height (ΦBΦB) for the sample have been determined to be 3.724 and 0.624 eV, respectively. The measured values of capacitance and conductance for the series resistance under all the biases have been corrected influence to calculate the real values of capacitance and conductance. The frequency dependence of the capacitance may be attributed to trapping states. Interface trap states of the MOS device increased by decreasing the frequency and were calculated as 1.12×1011 and 6.62×1011 eV−1 cm−2 for 1 MHz and 100 kHz, respectively. Several important device parameters such as barrier height (ΦBΦB), fermi energy (EFEF), diffusion voltage (VDVD), donor carrier concentration (NDND) and space charge layer width (WDWD) for the device have been obtained between 100 kHz and 1 MHz.