کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10127495 1645054 2018 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2
چکیده انگلیسی
The effects of in-situ NH3 plasma passivation on the interface between atomic layer deposited HfO2 and Ga-face n-GaN substrate in metal-oxidesemiconductor (MOS) devices were investigated by varying plasma power and exposure time and compared with GaN MOS device without plasma passivation. ALD HfO2-GaN device with in-situ NH3 plasma treatment shows improved electrical characteristics including negligible frequency dispersion at the near flat-band voltage region, lower hysteresis (∼10 mV), suppressed oxide capacitance dispersion in the accumulation (2.2%), lower leakage current density (5.21 × 10−2 A/cm2 at 1 V), and low interface state density (Dit) of ∼6.77 × 1011 eV−1 cm−2 at Ec-Et = 0.3 eV using an optimized plasma passivation exposure time of 10 min and power of 50 W. These results are attributed that NH3 plasma treatment could eliminate carbon species and detrimental sub-GaOx as well as passivate the surface and bulk defects on GaN caused by Ga-N dissociation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 149, November 2018, Pages 52-56
نویسندگان
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