کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10127495 | 1645054 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The effects of in-situ NH3 plasma passivation on the interface between atomic layer deposited HfO2 and Ga-face n-GaN substrate in metal-oxidesemiconductor (MOS) devices were investigated by varying plasma power and exposure time and compared with GaN MOS device without plasma passivation. ALD HfO2-GaN device with in-situ NH3 plasma treatment shows improved electrical characteristics including negligible frequency dispersion at the near flat-band voltage region, lower hysteresis (â¼10â¯mV), suppressed oxide capacitance dispersion in the accumulation (2.2%), lower leakage current density (5.21â¯Ãâ¯10â2â¯A/cm2 at 1â¯V), and low interface state density (Dit) of â¼6.77â¯Ãâ¯1011â¯eVâ1â¯cmâ2 at Ec-Etâ¯=â¯0.3â¯eV using an optimized plasma passivation exposure time of 10â¯min and power of 50â¯W. These results are attributed that NH3 plasma treatment could eliminate carbon species and detrimental sub-GaOx as well as passivate the surface and bulk defects on GaN caused by Ga-N dissociation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 149, November 2018, Pages 52-56
Journal: Solid-State Electronics - Volume 149, November 2018, Pages 52-56
نویسندگان
Woo Suk Jung, Donghwan Lim, Hoonhee Han, Andrey Sergeevich Sokolov, Yu-Rim Jeon, Changhwan Choi,