Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

- Ge gate stacks by exposing oxygen plasma to ALD Al2O3/Ge were proposed.
- GeOx formed between Al2O3 and Ge significantly reduces interface state density.
- High electron mobility of 690 cm2/Vs in Ge nMOSFETs with EOT of 0.7-0.8 nm.
- High hole mobility of 546 cm2/Vs in Ge p-MOSFETs with EOT of 0.7-0.8 nm.