کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1689935 1518950 2015 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of thermal annealing on the electrical and structural properties of Au/Y/p-type InP Schottky structure
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Effect of thermal annealing on the electrical and structural properties of Au/Y/p-type InP Schottky structure
چکیده انگلیسی


• Effects of annealing on electrical and structural properties of Au/Y/p-InP SBD are studied.
• Highest barrier height is achieved on Au/Y/p-InP SBD after annealing at 300 °C.
• Interface state density of Au/Y/p-InP SBD decreases upon annealing at 300 °C.
• Phosphorous phases are responsible for increase in barrier height after annealing at 300 °C.
• Overall surface morphology of the SBD is considerably smooth at elevated temperatures.

The effects of rapid thermal annealing on the electrical and structural properties of a fabricated Au/Y/p-InP Schottky barrier diode (SBD) have been investigated. The estimated Schottky barrier heights (SBHs) of the as-deposited and 200 °C annealed Au/Y/p-InP SBDs are found to be 0.62 eV (I–V)/0.83 eV (C–V) and 0.63 eV (I–V)/0.92 eV (C–V) respectively. However, the SBH increases to 0.65 eV (I–V)/0.96 eV (C–V) upon annealing at 300 °C. Further, the SBH slightly decreases to 0.59 eV (I–V)/0.78 eV (C–V) for contact annealed at 400 °C. The SBH, ideality factor and series resistance of the Au/Y/p-InP SBD are estimated by Norde and Cheung's methods. Also, the discrepancy between SBHs estimated from I–V, C–V, Norde and Cheung's methods are described and discussed. It is noted that the interface state density of the Au/Y/p-InP SBD decreases upon annealing at 300 °C and then slightly increases after annealing at 400 °C. The AES and XRD measurements have revealed that the formation of Au–In, Au–P and Y–P interfacial phases at the interface may be the reason for the increase and decrease of SBHs upon annealing. The AFM results showed that the surface morphology of the Au/Y Schottky contact is fairly smooth at various annealing temperatures.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 119, September 2015, Pages 276–283
نویسندگان
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