کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1787382 | 1023440 | 2012 | 6 صفحه PDF | دانلود رایگان |
SiO2/Si structure has been prepared by atmospheric-pressure (AP) plasma oxidation at 400 °C using gas mixtures of 0.5–5% O2 and He. From the characterization results of thickness, refractive index, atomic composition and electrical properties of the oxide films, it is found that the properties of SiO2/Si structures formed by AP-plasma oxidation are similar to those of high-temperature grown thermal oxides. By optimizing formation conditions, the SiO2/Si structure with a low interface state density of 1.4 × 1010 cm−2 eV−1 is obtained. On the other hand, the positive fixed charge density in the AP-plasma oxide film is relatively high at 5.3 × 1011 cm−2. These characteristics (low interface state density and high fixed charge density) are useful for effective field-effect passivation of Si surfaces for photovoltaic application.
Journal: Current Applied Physics - Volume 12, Supplement 3, December 2012, Pages S57–S62