Electrical characteristics of an organic thin copolymer/p-Si Schottky barrier diode

We have fabricated a poly(aniline-3-methyl thiophene) organic thin material on p-Si substrate by placing a solution of copolymer in acetonitrile on top of a p-Si substrate and then evaporating the solvent. The electrical and interface state density properties of the poly(aniline-3-methyl thiophene) copolymer/p-Si/Al diode have been investigated through methods using current–voltage (I–V), Cheung's, and a modified Norde's function. Good agreement was observed with the values of barrier height as obtained from all of these methods. The diode shows a non-ideal I–V behavior with an ideality factor greater than unity, which could be ascribed to the interfacial layer, interface states and series resistance. The interface state density of diode was determined using the forward-bias I–V characteristic technique at room temperature, and it decreases exponentially with bias from 1.39 × 1016 cm−2 eV−1 in (0.06 − Ev) eV to 4.86 × 1015 cm−2 eV−1 in (0.51 − Ev) eV.