Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements

As demonstrated for selected examples, the effect of optimized wet-chemical pre-treatments can be preserved during subsequent soft plasma enhanced chemical vapor depositions of Si oxides (SiOx), or amorphous materials such as Si (a-Si:H), Si nitride (a-SiNx:H), AlOx/a-SiNx and Si carbide (a-SiC:H) and enhance the energy conversion efficiency of heterojunction silicon solar cells.