Extraction of the device parameters of Al/P3OT/ITO organic Schottky diode using J–V and C–V characteristics

Thin film of poly(3-octylthiophene) (P3OT) was successfully prepared using dip coating technique. The morphology and the crystal structure of the prepared thin film were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. A study on interface states density distribution and characteristic parameters of the Al/P3OT/ITO device capacitor have been made. The diode parameters such as ideality factor, series resistance and barrier height were extracted from the forward biasing J–V characteristics. The energy distribution of the interface state density Dit was determined from the forward bias J–V characteristics by taking into account the bias dependence of the effective barrier height. The C–V and G/ω–V characteristics were measured in the frequency range from 10 kHz to 1 MHz and dc biasing voltage swept from −4 V to +4 V at room temperature (300 K). The non-ideal behavior of J–V and C–V characteristics can be attributed to the presence of the interface and the series resistance.

► Thin film of P3OT was successfully prepared using dip coating technique.
► Both capacitance and conductance characteristics are quite sensitive to the applied frequency.
► Non-ideal forward bias J–V characteristics of the Al/P3OT/ITO Schottky diode were observed.
► The energy distribution of the interface state density Dit was determined.
► Values of the interface and the series resistance are responsible for the non-ideal behavior of J–V and C–V characteristics.