DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions

In this article Deep Level Transient Fourier Spectroscopy experiments and various evaluation procedures were used to study emission and capture processes of deep energy levels in intentionally undoped InGaAs and GaAsN semiconductor structures. The examined samples, grown by Atmospheric Pressure Metal Organic Vapour Phase Epitaxy on GaAs substrates, were analyzed at various indium and nitrogen concentrations. Main attention was focused on differences in defect distributions, relations in possible composition and growth condition sensitive defect states. Valuable characteristics of particular In/N contents capable to eliminate or reduce specific impurities are discussed. A possible indium dependent dual state InGaAs complex and a nitrogen and growth condition dependent dual type GaAsN complex was introduced/confirmed. The most balanced samples for further utilizations were achieved for In = 8.9% and N = 1%.