Deep levels in the MBE ZnO:As/n-GaN diodes - Photoluminescence, electrical properties and deep level transient spectroscopy

Deep levels in the MBE ZnO:As/n-GaN diodes - Photoluminescence, electrical properties and deep level transient spectroscopy

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 742, 25 April 2018, Pages 296-303

E. Zielony, E. Przezdziecka, E. Placzek-Popko, W. Lisowski, M. Stachowicz, K.M. Paradowska, R. Jakiela, A. Kozanecki,