کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554600 | 1513251 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison between cathodoluminescence spectroscopy and capacitance transient spectroscopy on Al+ ion implanted 4H-SiC p+/n diodes
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Comparison between cathodoluminescence spectroscopy and capacitance transient spectroscopy on Al+ ion implanted 4H-SiC p+/n diodes Comparison between cathodoluminescence spectroscopy and capacitance transient spectroscopy on Al+ ion implanted 4H-SiC p+/n diodes](/preview/png/1554600.png)
چکیده انگلیسی
The comparison between cathodoluminescence and deep level transient spectroscopy is a powerful tool to analyze the defect formation in implanted materials. In this work aluminium implanted 4H-SiC p+/n diodes are studied. Different structures, implanted with different ion energy and fluencies, are analyzed in order to understand the process related effects. The comparison between the epilayer and the implanted areas shows an increase of the concentration of intrinsic defects in the implanted areas. The 4H-SiC band-edge emission decreases, increasing the aluminium ion dose, due to the enhancement of the lattice disorder, partially recovered by the post-implantation annealing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 45, Issues 4–5, April–May 2009, Pages 383–387
Journal: Superlattices and Microstructures - Volume 45, Issues 4–5, April–May 2009, Pages 383–387
نویسندگان
F. Fabbri, D. Natalini, A. Cavallini, T. Sekiguchi, R. Nipoti, F. Moscatelli,