کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6946074 | 1450522 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of deep level defects in bipolar junction transistors irradiated by 2Â MeV electrons
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Analysis of deep level defects in bipolar junction transistors irradiated by 2Â MeV electrons Analysis of deep level defects in bipolar junction transistors irradiated by 2Â MeV electrons](/preview/png/6946074.png)
چکیده انگلیسی
In this work we investigate the deep level defects and the electrical characteristics of commercial PNP bipolar junction transistor (BJT) irradiated by 2Â MeV electrons with various fluences. The activation energy and the capture cross-section characteristics of the defects were obtained by deep level transient spectroscopy (DLTS). Five types of traps (including minority carrier traps and majority carrier traps) were observed before and after irradiation. By applying different reverse bias to the sample, the defects in the bulk and at the interface could be distinguished. The formation of such defects resulted in the degradation of the transistors-gain. Therefore the use of annealing methods at appropriate temperature was considered to recover the optimum electrical characteristics of the device.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 79, December 2017, Pages 149-152
Journal: Microelectronics Reliability - Volume 79, December 2017, Pages 149-152
نویسندگان
Yao Ma, Pengfei Xu, Mingyue Guan, Filippo Boi, Gao Bo, Min Gong, Xue Wu, Yuxin Wang, Hua Wang, ZengQiang Niao,