Gamma irradiation effects on Al/n-Si Schottky junction properties

In this paper the gamma irradiation effects on the structural and electrical properties of n-Si and Al/n-Si Schottky junctions are presented up to a cumulative radiation dose of 1500 kGy. The structural studies using XRD and Raman spectroscopic techniques showed no greater degradation in the crystallinity of the n-Si crystals due to the irradiation effects. However, considerable variations in the I-V characteristics of Al/n-Si Schottky junctions and its junction parameters such as Schottky barrier height (ΦB), ideality factor (n) and series resistance (RS) indicates the presence of gamma induced defect states in the interface as well as bulk of the crystal. The surface and interface analysis of the irradiated Al/n-Si Schottky junction revealed modification in the effective work function of Al and presence of different chemical states (AlOxSiOx) in the interface. The contribution of these interface trap states on the band bending properties and I-V characteristics are explained in detail by realizing the power law characteristics and energy band diagram of the Al/n-Si Schottky junction.