کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5367199 | 1388362 | 2006 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing](/preview/png/5367199.png)
چکیده انگلیسی
The results of positive/negative Fowler-Nordheim high electric field stress and thermal post-high electric field stress annealing of commercial n-channel power VDMOSFETs have been presented. They have shown that gate bias sign has an influence on the fixed trap behavior during high electric field stress, but has no influence on any defect type behavior during thermal post-high electrical field stress annealing. In addition, slow switching traps have different behavior, but fast switching traps have the same behavior during thermal post-high electrical field stress annealing and thermal post-irradiation annealing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 8, 15 February 2006, Pages 3023-3032
Journal: Applied Surface Science - Volume 252, Issue 8, 15 February 2006, Pages 3023-3032
نویسندگان
Goran S. RistiÄ, MomÄilo M. PejoviÄ, Aleksandar B. JakÅ¡iÄ,