Keywords: 78.40. فو; 78.40.Fy; 78.20.Ci; 78.30.-j; A. Semiconductors; A. Chalcogenides; B. Crystal structure; C. Infrared spectroscopy; D. Optical properties;
مقالات ISI 78.40. فو (ترجمه نشده)
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Keywords: 78.40. فو; 78.40.Fy; 78.20.Ci; 78.30.-jSemiconductors; Chalcogenides; Optical properties; Infrared reflection
Sonocatalytic degradation of RhB over LuFeO3 particles under ultrasonic irradiation
Keywords: 78.40. فو; 78.40.Fy; 81.07.-b; 82.30.Vy; LuFeO3 particles; Sonocatalytic activity; Influencing factors; OH radicals;
Optical spectra in the region of exciton resonances in quantum wells and quantum dots of In0.3Ga0.7As/GaAs heterostructures
Keywords: 78.40. فو; 71.36.+c; 78.40.Fy; 78.20.Ci; 78.55.Cr; 78.67.De; 78.67.Hc; Heterostructures; Quantum wells; Quantum dots; Reflection; Absorption; Luminescence; Excitons; Optical functions;
Direct creation of black silicon using femtosecond laser pulses
Keywords: 78.40. فو; 78.68.+m; 78.20.Ci; 78.40.Fy; 81.40.Tv; Femtosecond laser; Reflectance; Microstructures; Nanostructures; Silicon;
Optical properties of TlGaxIn1âxS2 layered mixed crystals (0 â¤Â x â¤Â 1) I. Composition- and temperature-tuned energy band gap
Keywords: 78.40. فو; 78.20.Ci; 78.40.âq; 78.40.Fy; Semiconductors; Crystal growth; Optical properties; Light absorption and reflection;
Effect of He+ irradiation on the optical properties of vacuum evaporated silver indium selenide thin films
Keywords: 78.40. فو; 29.20.Ej; 61.05.cp; 78.40.Fy; 79.20.RfThin film; X-ray diffraction; Ion beam technology; Optical properties
Band gap energy and bowing parameter of In-rich InAlN films grown by magnetron sputtering
Keywords: 78.40. فو; 78.66.Fd; 78.40.Fy; 81.15.Cd; semiconducting III-V materials; InAlN; optical properties; magnetron sputtering;
Fabrication of SnO2 one-dimensional nanosturctures with graded diameters by chemical vapor deposition method
Keywords: 78.40. فو; 61.46.Km; 61.82.Fk; 78.40.Fy; 81.15.GhA1. Nanostructures; A3. Chemical vapor deposition; B1. Processes; B1. Nanomaterials; B2. Semiconducting materials
Physical properties of Ga-doped ZnO thin films by spray pyrolysis
Keywords: 78.40. فو; 71.55.Gs; 73.61.Ga; 78.40.Fy; 78.40.Pg; 78.55.Et; 78.66.HfSpray pyrolysis; ZnO; Optical properties; RMS strain; Photoluminescence
ReviewDramatic improvement of excitonic photoluminescence in metal halide films
Keywords: 78.40. فو; 71.35.ây; 78.20.âe; 78.40.Fy; 78.55.Hx; Metal halides; Luminescence; Exciton; Exciton laser; Thin film;
Preparation of transparent conductive TiO2:Nb thin films by pulsed laser deposition
Keywords: 78.40. فو; 81.15.Fg; 73.61.Le; 78.40.Fy; Pulsed laser deposition; Nb-doped TiO2 thin films; Transparent conducting oxide;
Nano- and microdot array formation by laser-induced dot transfer
Keywords: 78.40. فو; 52.38.Mf; 78.40.Fy; Nano-array; Microdot; Laser-induced dot transfer; β-FeSi2 semiconductor; Near-infrared photoluminescence; Atmospheric room-temperature conditions;
Effect of H+ irradiation on the optical properties of vacuum evaporated AgInSe2 thin films
Keywords: 78.40. فو; 29.20.Ej; 61.05.cp; 78.40.Fy; 79.20.Rf; Thin film; X-ray diffraction; Ion beam technology; Optical properties;
Sr9R2âxEuxW4O24 (R=Gd and Y) red phosphor for near-UV and blue InGaN-based white LEDs
Keywords: 78.40. فو; 74.25.Gz; 78.40.Fy; 78.55.-m; 76.30.Kg; A. Semiconductors; D. Optical properties; E. Luminescence; E. Photoelectron spectroscopies;
Quantum confinement effect in ZnO nanoparticles synthesized by co-precipitate method
Keywords: 78.40. فو; 78.40.Fy; 78.67.Hc; 79.60.JvZnO; Nanoparticles; Quantum confinement; Spectroscopy; Optical properties
Light-induced absorption change in Fe-doped GaN
Keywords: 78.40. فو; 78.40.Fy; 71.55.Eq;
Improvement of the efficiency of CuPc/C60-based photovoltaic cells using a multistepped structure
Keywords: 78.40. فو; 73.61.Wp; 73.50.Pz; 72.40.+w; 78.40.Fy; 82.47.Jk; 84.60.JtOrganic photovoltaic cells; Multistepped structure; Concentration gradient; Deposition rates; Chemical potential energy gradient; Charge-separation interface
Optical properties of citrate-stabilized CdS nanoparticles
Keywords: 78.40. فو; 71.55.Gs; 73.20âr; 78.40.Fy; 78.55âm; 78.67.Bf; 81.07âb; Nanoparticles; Surface-trap states; Band-edge emission; Optical absorption;
High temperature dependence of the cubic phase content and optical properties of BN thin films
Keywords: 78.40. فو; 78.40.Fy; 78.20.CiCubic boron nitride films; Annealing; FTIR; UV-visible; Optical properties
Fabrication of CdTe solar cell using an Inx(OOH,S)y/CdS double layer as a heterojunction counterpart
Keywords: 78.40. فو; 84.60.Jt; 81.05.Dz; 78.40.Fy; 68.55.Jk; 66.30.NyCdTe solar cell; Window layer; Inx(OOHS)y; Chemical bath deposition
Exciton–phonon luminescence and Raman scattering in CuGaS2 crystals
Keywords: 78.40. فو; 78.40.Fy; 78.55.Hx; 71.35.−yChalcopyrite; Optical reflectivity; Photoluminescence; Exciton polaritons
Influence of Al-doping on the structure and optical properties of ZnO films
Keywords: 78.40. فو; 78.40.Fy; 78.55.Et; 78.66.Hf; 78.68.+mZnO thin films; RF magnetron sputtering; Atomic force microscopy; X-ray diffraction; Optical properties; Quantum confinement effect
Structural, luminescent and thermal properties of blue SrAl2O4:Eu2+, Dy3+ phosphor filled low-density polyethylene composites
Keywords: 78.40. فو; 71.20.Nr; 78.40.Fy; 78.47.Cd; 78.55.ApComposites; SrAl2O4:Eu2+, Dy3+; LDPE; Luminescence; DSC; TGA
Characterization of InSb layers on GaAs substrates using infrared reflectance and a modified oscillator formula
Keywords: 78.40. فو; 78.20.By; 78.40.Fy; 78.66.FdInfrared reflectance; Modified drude; InSb
Photoluminescence and phosphorescence properties of MAl2O4:Eu2+, Dy3+ (M=Ca, Ba, Sr) phosphors prepared at an initiating combustion temperature of 500 °C
Keywords: 78.40. فو; 71.20.Nr; 78.40.Fy; 78.47.Cd; 78.55.ApPhotoluminescence; Alkaline earth aluminates; Lattice distortion; Long afterglow
Elastic, electronic and optical properties of SiGe2N4 under pressure: An ab initio study
Keywords: 78.40. فو; 71.15 Ap; 78.40.Fy; 78.20.CiFP-APW + lo; Elastic constants; Electronic properties; Optical constants; Pressure effects
A novel one-step electrochemical method to obtain crystalline titanium dioxide films at low temperature
Keywords: 78.40. فو; 81.15.Pq; 78.40.Fy; 61.82.Bg; 61.82.RxSemiconductors; Thin films; Titanium dioxide; Crystal growth; Electrodeposition
Ellipsometric characterization of PbI2 thin film on glass
Keywords: 78.40. فو; 78.20.Ci; 78.66.−w; 78.40.Fy; 78.20.Bh; 78.68. +m; 71.20.NrOptical properties; Ellipsometry; Lead iodide; Band gap; Urbach's energy
Characterization and luminescent properties of SiO2:ZnS:Mn2+ and ZnS:Mn2+ nanophosphors synthesized by a sol–gel method
Keywords: 78.40. فو; 61.05.cp; 68.37.Lp; 71.55.Gs; 78.40.Fy; 78.55.Et; 81.16.BeZnS:Mn2+; Nanophosphors; Bandgap; Luminescence
The influence of H2/(H2Â +Â Ar) ratio on microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD
Keywords: 78.40. فو; 78.20.Ci; 78.30.âj; 78.40.Fy; 72.20.âi; Hydrogenated microcrystalline silicon films; Plasma-enhanced CVD; Ar diluted gas; microstructure; Optoelectronic property;
Thermal stability of C-doped GaAs/AlAs DBR structures
Keywords: 78.40. فو; 78.20.−e; 78.30.Fs; 78.40.Fy; 78.66.FdThermal stability; Reflectivity; Carbon-doped; Distributed Bragg reflectors
Anomalous temperature dependence of optical properties of cubic MgZnO: Effect of carrier localization
Keywords: 78.40. فو; 78.66.Hf; 78.20.Ci; 78.40.Fy; 78.40.Pg; MgZnO thin films; Carrier localization; Optical properties;
Photocurrent amplification in a isotype N+-GaSb/n0-GaInAsSb type II heterojunctions
Keywords: 78.40. فو; 72.40.+w; 73.40.Kp; 78.40.Fy; 70.40.+zIsotype structures; Type II heterojunctions with staggered band alignment; Photo-response
Optical investigations using ultra-soft pseudopotential calculations of Si0.5Ge0.5 alloy
Keywords: 78.40. فو; 73.21.La; 78.40.Fy; 71.15.DxA. SiGe alloy; B. Optical properties; C. VASP
Low-temperature thermoluminescence in CaGa2S4:Eu2+
Keywords: 78.40. فو; 78.20.âe; 78.40.Fy; 78.60.Kn; 76.30.Kg; Photoluminescence; Thermoluminescence; Rare earths; Ternary compounds;
45 nm CMOS technology with low temperature selective epitaxy of SiGe
Keywords: 78.40. فو; 61.72.-y; 61.72.Ff; 78.40.Fy; Embedded SiGe; Epi-temperature; Recess shape; Surface pre-treatment;
Comparison and semiconductor properties of nitrogen doped carbon thin films grown by different techniques
Keywords: 78.40. فو; 78.40.Fy; 81.05.Hd; 81.15.Fg; Carbon nitride; DC sputtering; Radio frequency magnetron sputtering; Pulsed laser deposition;
A spectroscopic ellipsometric investigation of new critical points of Zn1âxMnxS epilayers
Keywords: 78.40. فو; 78.20.âe; 78.40.Fy; Zn1âxMnxS epilayer; Spectroscopic ellipsometry; Critical points;
Influence of Ag-doping on the optical properties of ZnO films
Keywords: 78.40. فو; 78.40.Fy; 78.55.Et; 78.66.Hf; ZnO thin films; RF magnetron sputtering; X-ray diffraction; Optical properties;
Investigation of energy band gap and optical properties of cubic CdS epilayers
Keywords: 78.40. فو; 78.20.âe; 78.40.Fy; Cubic CdS; Spectroscopic ellipsometry; Hot-wall epitaxy; Pseudodielectric function; Transmittance spectra;
Semi-insulating GaN substrates for high-frequency device fabrication
Keywords: 78.40. فو; 78.30.Fs; 81.05.Ea; 78.40.Fy; 78.55.m; 71.70.Ch; 71.35.−yA1. Characterization; A1. Impurities; A1. X-ray diffraction; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting materials
Optical properties of bulk GaN crystals grown from solution at moderate pressure and temperature
Keywords: 78.40. فو; 78.40.FY; 71.70.Ch; 78.55.−m; 71.35.−y; 81.05.Ea; 78.30.FsA1. Characterization; A1. Impurities; A1. Point defects; A2. Growth from high temperature solutions; A2. Single crystal growth; B1. Nitrides
Characterization of MoSe2 thin film deposited at room temperature from solution phase
Keywords: 78.40. فو; 71.20.Nr; 73.61.Le; 78.40.Fy; 78.66.LiA1. Crystal morphology; A1. X-ray diffraction; A2. Growth from solution; A3. Polycrystalline deposition; B1. Inorganic compound; B2. Semiconducting materials
Annealing-induced structural transformation of gelatin-capped Se nanoparticles
Keywords: 78.40. فو; 78.30.-j; 78.30.Am; 78.40.Fy; 63.20.-e; 63.50.+x; 71.20.MqA. Nanostructures; A. Semiconductors; B. Chemical synthesis; D. Optical properties
Magnetic field effect on transitions between direct and indirect excitons in diluted magnetic semiconductor double quantum wells
Keywords: 78.40. فو; 78.40.Fy; 78.67.De; 75.75.+a; 71.35.−yDouble quantum well; Exciton; Semimagnetic semiconductors
Refractive index, oscillator parameters and temperature-tuned energy band gap of Tl4In3GaS8-layered single crystals
Keywords: 78.40. فو; 78.20.Ci; 78.40.âq; 78.40.Fy; A. Chalcogenides; A. Semiconductors; D. Optical properties;
Generation of extremely photo-luminescent CuBr crystallites in the CuCl/KBr system (CuCl film on KBr crystal)
Keywords: 78.40. فو; 71.35.−y; 78.20.−e; 78.40.Fy; 78.55.HxLuminescence; Thin film; Semiconductor; CuBr; CuCl
Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs
Keywords: 78.40. فو; 78.40.Fy; 73.40.Qv; 72.20.Ht; 72.20.JvFowler-Nordheim injection; High electric field stress; Oxide trapped charge; Interface traps; Switching traps; MOS transistors
AP-MOVPE of InGaAs on GaAs (0 0 1): Analysis of in situ reflectivity response
Keywords: 78.40. فو; 78.40.Fy; 78.20.Bh; 78.66.Fd; 81.05.Ea; 81.70.FyReflectometry; InGaAs; AP-MOVPE; Refractive index