کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5359453 | 1388247 | 2009 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The influence of H2/(H2Â +Â Ar) ratio on microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The influence of H2/(H2Â +Â Ar) ratio on microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD The influence of H2/(H2Â +Â Ar) ratio on microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD](/preview/png/5359453.png)
چکیده انگلیسی
Hydrogenated microcrystalline silicon films were deposited by glow discharge decomposition of SiH4 diluted in mixed gas of Ar and H2. By investigating the dependence of the film crystallinity on the flow rates of Ar and H2, we showed that the addition of Ar in diluted gas markedly improves the crystallinity due to an enhanced dissociation of SiH4. The infrared-absorption spectrum reveals that the fraction of SiH bonding increases with increasing the rate ratio of H2/(H2Â +Â Ar). The surface roughness of the films increases with increasing the flow rate ratio of H2/(H2Â +Â Ar), which is attributed to the decrease of massive bombardment of Ar ions in the plasma. Refractive index and absorption coefficient of the films were obtained by simulating the optical transmission spectra using a modified envelope method. Electrical measurements of the films show that the dark conductivity increases and the activation energy decreases with the ratio of H2/(H2Â +Â Ar). A reasonable explanation is presented for the dependence of the microstructure and optoelectronic properties on the flow rate ratio of H2/(H2Â +Â Ar).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 21, 15 August 2009, Pages 8867-8873
Journal: Applied Surface Science - Volume 255, Issue 21, 15 August 2009, Pages 8867-8873
نویسندگان
Zeguo Tang, Wenbin Wang, Bo Zhou, Desheng Wang, Shanglong Peng, Deyan He,