Optical spectra in the region of exciton resonances in quantum wells and quantum dots of In0.3Ga0.7As/GaAs heterostructures

► Ground and excited states of exciton polaritons are studied in In0.3Ga0.7As/GaAs QW. ► Features due to QD formed at the interface of nanolayers and the buffer are observed. ► The parameters of excitons in QW and QD are estimated. ► The lifetime of charge carriers on quantum dots varies in the range of 0.04 −0.1 ps. ► The radiative life time of the exciton in QW is found to be equal to 2 ps.