کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1517181 | 1511603 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Refractive index, oscillator parameters and temperature-tuned energy band gap of Tl4In3GaS8-layered single crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Transmission and reflection measurements in the wavelength region 450-1100Â nm were carried out on Tl4In3GaS8-layered single crystals. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.32 and 2.52Â eV, respectively. The rate of change of the indirect band gap with temperature dEgi/dT=-6.0Ã10â4Â eV/K was determined from transmission measurements in the temperature range of 10-300Â K. The absolute zero value of the band gap energy was obtained as Egi(0)=2.44Â eV. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index were found to be 4.87Â eV, 26.77Â eV, 8.48Ã1013Â mâ2 and 2.55, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issue 10, October 2008, Pages 2385-2389
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issue 10, October 2008, Pages 2385-2389
نویسندگان
K. Goksen, N.M. Gasanly,