کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1595242 | 1515680 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Sr9R2âxEuxW4O24 (R=Gd and Y) red phosphor for near-UV and blue InGaN-based white LEDs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Eu3+-activated phosphors, Sr9R2âxEuxW4O24 (R=Gd and Y ), were prepared by the conventional solid-state reaction method and their photoluminescent properties were studied. The phosphors show intense red emission under 395 and 465 nm light excitation, which is matched with the light-emitting wavelength of a near-UV-emitting and a blue-emitting InGaN chips, respectively. Bright red-light-emitting diodes (LEDs) and white-light-emitting diodes (WLEDs) were fabricated by coating Sr9Y 0.4Eu1.6W4O24 phosphor onto â¼395 nm-emitting InGaN chips and â¼460 nm blue-emitting InGaN chips, respectively. The good performances of the LEDs demonstrate that the tungstates are suitable for application of near-UV and blue InGaN-based WLEDs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 149, Issues 21â22, June 2009, Pages 880-883
Journal: Solid State Communications - Volume 149, Issues 21â22, June 2009, Pages 880-883
نویسندگان
Qihua Zeng, Pei He, Ming Pang, Hongbin Liang, Menglian Gong, Qiang Su,