Characterization of MoSe2 thin film deposited at room temperature from solution phase

A simple, low-temperature method has been developed to synthesis molybdenum diselenide semiconductor thin films, based on the chemical reaction of complexed ammonium molybdate, hydrazine hydrate and sodium selenosulphate in aqueous alkaline medium. The deposition parameter of the MoSe2 thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption and electrical measurements. The deposited film was found to be polycrystalline in hexagonal form. The direct band gap ‘Eg’ for the film was found to be 1.43 eV and electrical conductivity in the order of 10−2 (Ω cm)−1 with n-type conduction mechanism.