Keywords: 61.72.Cc; 71.20.Nr; 78.20.Ci; 81.15.Cd; 82.80.Pv; ITO; Post-annealing; Bandgap; XPS;
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Combined low-temperature photoluminescence and thermally stimulated current studies in Cu3In5S9 layered single crystals
Keywords: 78.55.−m; 78.20.−e; 71.20.Nr; 71.20.−bSemiconductors; Crystal growth; Photoluminescence spectroscopy; Optical properties; Electrical conductivity
Negative thermal expansion and electrical properties of α-Cu2V2O7
Keywords: 65.40.De; 87.63.Pn; 71.20.Nr; Negative thermal expansion; α-Cu2V2O7; Solid state method; Impedance spectrum;
Crystal and electronic characterization of NdxTi1âxBO2+d semiconductors
Keywords: 71.20.Be; 71.20.Eh; 71.20.Nr; 74.25.Jb; Oxides; Semiconductors; XAFS (EXAFS and XANES); Electronic structure; Crystal structure;
First-principles calculations of the structural, electronic and optical properties of In1âxBxAsyP1ây quaternary alloys lattice matched to InP and BeS
Keywords: 61.66.Dk; 71.15.Ap; 71.15.Nc; 71.15.Mb; 71.20.Nr; 71.20.-b; FP-LAPW; DFT; In1âxBxAsyP1ây quaternary alloys; Lattice matched;
Fabrication and characterization of SbSI gel for humidity sensors
Keywords: 71.20.Nr; 77.84.âs; 81.07.Gf; 81.07.Bc; 82.70.Gg; Antimony sulfoiodide; Nanowires; Semiconductors; Ferroelectrics; Sonochemistry;
Optical and energy-loss spectra of ZnS from ab initio molecular dynamics simulation: Temperature effect
Keywords: 71.15.−m; 71.20.Nr; 71.35.Ee; 78.40.FyOptical properties; Temperature effect; Molecular dynamics simulation; ZnS
Field emission from ZnO whiskers under intervalley electron redistribution
Keywords: 85.45.âw; 85.45.Bz; 81.15.Gh; 71.20.Nr; 72.20.Ht; ZnO; Field emission; Electron transfer effect; Spectroscopy;
Effect of cation substitution on electronic band structure of ZnGeAs2 pnictides: A mBJLDA approach
Keywords: 71.15.Mb; 71.20.Nr; 71.22.+i; Band structure; DFT; FPLAPW method; Chalcopyrite; mBJ;
Exploring calcium tantalates and niobates as prospective catalyst supports for water electrolysis
Keywords: 71.15.Nc; 71.20.Nr; 71.20.PsElectronic structure; Density functional theory; Calcium niobates; Calcium tantalates; Doping; Catalyst support
Temperature- and excitation-dependent photoluminescence in TlGaSeS layered crystals
Keywords: 71.20.−b; 71.20.Nr; 78.20.−e; 78.55.−mPhotoluminescence; Semiconductors; Layered crystals; Defect levels
Comparative study of tetragonal Cu2In7Se11.5 and trigonal CuIn5Se8 by spectroscopic ellipsometry
Keywords: 71.20.Nr; 78.20.Ci; 81.05.Hd; 42.70.Nq; Semiconductors; Polarimeters and ellipsometers; CuIn5Se8; Optical properties;
Analysis of the aging characteristics of SnO2 gas sensors
Keywords: 71.20.Nr; 73.20.Qt; 81.07.Bc; 81.65.Mq; 82.47.RsSnO2; Gas-sensing; Aging characteristics; Complex Impedance Spectroscopy; Absorption currents
Pressure induced phase transformation and electronic properties of AlAs
Keywords: 62.50.±p; 68.35.Rh; 71.20.Nr; 71.15.Mb; 64.70.Kb; Phase transition; High pressure; Electronic properties; AlAs;
Optical and electrical properties of zinc oxide thin films with low resistivity via Li–N dual-acceptor doping
Keywords: 71.20.Nr; 61.46.Hk; 61.72.ddUltraviolet emission; Electronic properties; Li–N dual-acceptor doping; Zinc oxide thin films; Successive ionic layer adsorption and reaction
Polarizability of a hydrogenic donor impurity in a ridge quantum wire
Keywords: 71.15.−m; 71.15.Ap; 71.20.Nr; 71.24.+qNanostructures; Polarizability; Quantum wires; Electronic states; Electronic transports
Theoretical and experimental study on the electronic structure and optical absorption properties of P-doped TiO2
Keywords: 71.55.2i; 71.15.Mb; 71.20.Nr; 78.20.2e; TiO2; P-doped TiO2; Sol-gel technology; Ab initio calculations;
Influence of radiofrequency power on compositional, structural and optical properties of amorphous silicon carbonitride films
Keywords: 71.20.Nr; 73.61.Jc; 78.30.âj; 81.15.C; Amorphous SiCN films; Magnetron sputtering; RF power; Composition; Structure; Optical band gap;
Magnetic properties of Ni doped gallium nitride with vacancy induced defect
Keywords: 71.15.Mb; 71.20.Be; 71.20.Nr; 71.55.EqGallium nitride; Dilute magnetic semiconductor; Magnetic moment; Vacancy
Investigations on the properties of solid solutions of pseudo-binary lead chalcogenides
Keywords: 71.20.Nr; 72.15.Eb; 78.20.âe; 73.61âr; Chalcogenides; Electrical properties; Thin films; Optical properties;
The influence of the substrate temperature on the photovoltaic properties of spray-deposited CdS:In thin films
Keywords: 61.72.Vv; 73.61.r; 71.20.Nr; 71.55.Gs; 73.61.Ga; Thin films; Semiconductors; Spray pyrolysis; X-ray diffraction;
Effect of laser incident energy on the structural, morphological and optical properties of Cu2ZnSnS4 (CZTS) thin films
Keywords: 43.35.Ns; 71.20.Nr; 81.15.Fg; 61.05.cpPolycrystalline; Cu2ZnSnS4 (CZTS) thin films; Pulsed laser deposition (PLD); X-ray diffraction (XRD); Field emission scanning electron microscopy (FE-SEM); Optical absorption
Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque
Keywords: 61.46.Km; 71.20.Nr; 94.30.Kq; GaN; Nanowire; Electric field; Alignment;
Origin of HfO2/GaAs interface states and interface passivation: A first principles study
Keywords: 73.20.At; 71.20.Nr; HfO2/GaAs interface; Fermi level pinning; Electronegativity (EN);
Structural and optical properties of a-Si1âxCx:H films synthesized by dc magnetron sputtering technique
Keywords: 71.20.Nr; 78.20.âe; 78.40.âq; 78.55.âm; Silicon carbide; Sputtering; Amorphous film; Structure; Luminescence; SIMS;
Crystal structural, magnetic and electrical transport properties of CeKFeMoO6 double perovskite
Keywords: 61.05.cp; 61.66.Fn; 71.20.Nr; 72.80.Tm; 75.50.Pp; 75.47.GkElectroceramics; Magnetic materials; Electronic materials; Crystal structure
Silicon carbide film deposition at low temperatures using monomethylsilane gas
Keywords: 81.15.Gh; 71.20.Nr; 81.15.KkSilicon carbide; Monomethylsilane; Chemical vapor deposition; Low temperature
First-principles calculations of the structural, elastic, electronic and optical properties of orthorhombic LiGaS2 and LiGaSe2
Keywords: 71.15.Mb; 71.20.Nr; 71.22.+i; 71.90.+qDFT; Orthorhombic semiconductors; Electronic structure; Optical properties
Ab-initio determination of X-ray structure factors and the Compton profiles of CdO
Keywords: 71.15.Ap; 71.15.Dx; 71.15.Mb; 71.15.Nc; 71.20.Nr; 78.70.âg; Band structure; Cadmium oxide; Compton profile; Equation of state; LCAO method; X-ray structure factors;
The spin effect in zinc-blende Cd0.5Mn0.5TeCd0.5Mn0.5Te and Zn0.5Mn0.5TeZn0.5Mn0.5Te diluted magnetic semiconductors: FP-LAPW study
Keywords: FP-L/APW+loFP-L/APW+lo; Diluted magnetic semiconductors; Magnetic properties71.15.Mb; 71.20.Nr; 71.55.Gs
First-principles study on structural properties and phase stability of III-phosphide (BP, GaP, AlP and InP)
Keywords: 71.15.Mb; 71.20.âb; 71.20.Nr; 71.55.Eq; III-Phosphide (BP, GaP, AlP, InP); Lattice parameter; Bulk modulus; Pressure; Phase transition; FP-LAPW+lo; GGA;
Sonochemical preparation of antimony subiodide
Keywords: 71.20.Nr; 81.07.Bc; 82.70.GgSonochemistry; Antimony subiodide; Nanoparticles; Semiconductors
Nitrogen-electronegativity-induced bowing character in ternary zincblende Ga1âxInxN alloys
Keywords: 71.15.âm; 71.20.Nr; 71.55.Eq; 78.55.Cr; Band structure; III-V semiconductors; Photoluminescence;
Surface passivation of III-V semiconductors for future CMOS devices-Past research, present status and key issues for future
Keywords: 71.20.Nr; 71.55.Eq; 73.21.Hb; 73.40.Gk; 73.40.Kp; III-V semiconductor; Surface passivation; MISFET; High-k dielectric; Photoluminescence; GaAs;
Investigation of porous silicon carbide as a new material for environmental and optoelectronic applications
Keywords: 71.20.Nr; 78.20.âe; 78.40.âq; 78.55.âm; Silicon carbide; Electro(chemical); PSC; Gas sensing; Photodiode;
Observation of new critical point in InxAl1âxAs alloy using spectroscopic ellipsometry
Keywords: 78.20.Ci; 78.66.Fd; 71.20.Nr; Ellipsometry; InAlAs; Dielectric function; Band calculation; LASTO;
Statistical model for the formation of the Ge1-xSnx alloy
Keywords: 71.20.Nr; 71.55.Ak; 71.15.âm; Nanostructures; Optoelectronics; Semiconductor alloys; Tunable direct gap;
Photon- and electron-induced surface voltage in electron spectroscopies on ZnSe(0Â 0Â 1)
Keywords: 79.60.Bm; 73.20.At; 71.20.Nr; 72.20.âi; Inverse photoemission; Photoemission; Absorbed current; Surface band bending; Surface photovoltage; ZnSe;
The nuclear quadrupole interaction at 111Cd and 181Ta sites in anatase and rutile TiO2: A TDPAC study
Keywords: 61.66Fn; 07.05.Hd; 71.20.Nr; A. Oxide; B. Chemical synthesis;
Electrochromism in indium-tin-oxide films for laser-writing application
Keywords: 71.20.Nr; 71.23.Cq; 73.63.BdX-ray diffraction; Scanning electron microscopy; Atomic force microscopy; Laser writing
Binding energy of hydrogen–Cd vacancy complex in CdTe
Keywords: 71.55.Gs; 71.20.Nr; 71.15.PdComplex impurity; Binding energy; II–VI semiconductor
Energy gaps in a spacetime crystal
Keywords: 03.30.+p; 71.20.Mq; 71.20.Nr; 71.10.-w; 71.20.-b; 85.40.-e
Persistent photoconductivity and thermally stimulated current related to electron-irradiation induced defects in single crystal ZnO bulk
Keywords: 71.20.Nr; 72.40.+w; 61.72.Ji; 71.55.-iA. Semiconductors; C. Point defects; D. Photoconductivity; D. Radiation effects
Synthesis of TiO2(B) using glycolato titanium complex and post-synthetic hydrothermal crystal growth of TiO2(B)
Keywords: 71.20.Nr; 81.10.Dn; 77.84.BwA1. Crystal morphology; A2. Hydrothermal crystal growth; B1. Titanium compounds
Point defects induced in ion irradiated 4H–SiC probed by exciton lines
Keywords: 71.20.Nr; 71.35.−y; 71.35.Aa; 71.55.Eq; 78.55.−mSilicon carbide; Ion-irradiation; Defects; Low temperature photoluminescence; Exciton
Effect of isoelectronic substitution of Bi on the photoelectrical properties in amorphous Sn–Sb–Se films
Keywords: 71.20.Nr; 72.20.-I; 78.66.JgA. Semiconductors; A. Thin films; D. Optical properties; X-ray diffraction
Low temperature transport and thermal properties of half-Heusler alloy Zr0.25Hf0.25Ti0.5NiSn
Keywords: 72.15.Jf; 72.20.Pa; 71.20.Nr; 63.20.kpHalf-Heusler alloy; Thermoelectric property; Disorder effect
A density functional study of structural and elastic properties of LaN under high pressure
Keywords: 71.15.Mb; 71.20.Nr; 71.20.−b; 71.55.Gs; 71.15.−mStructural properties; Elastic constants; Density functional calculation; LaN: High pressure
Characterization of CdTe thin films fabricated by close spaced sublimation technique and a study of Cu doping by ion exchange process
Keywords: 71.20.Nr; 81.05.Dz; 73.61.Ga; 61.72.VvFilms and coatings
FP-LMTO investigations of mechanical stability and high pressure of platinum nitride compounds
Keywords: 71.15.Ap; 71.20.Nr; 71.15.Nc; 74.62.FjA. Super hard materials; B. FP-LMTO; C. High pressure; D. Ground state