کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1672542 | 1008935 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of isoelectronic substitution of Bi on the photoelectrical properties in amorphous Sn–Sb–Se films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of isoelectronic substitution of Bi on the photoelectrical properties in amorphous Sn–Sb–Se films Effect of isoelectronic substitution of Bi on the photoelectrical properties in amorphous Sn–Sb–Se films](/preview/png/1672542.png)
چکیده انگلیسی
Amorphous thin films of Sn10Sb20 − xBixSe70 (0 ≤ x ≤ 6) system have been prepared by thermal evaporation technique. The optical gap and dc activation energy first increases with the addition of Bi (x = 2) and then decreases sharply with further addition. The photocurrent initially increases with time and then saturates to a constant value for all the samples. The decay portion of photocurrent has two components, fast one followed by a slow decay. Photocurrent (Iph) versus light intensity (F) follows the power law Iph ∝ Fγ and the value of the exponent (γ) decreases from 0.76 to 0.53 as the Bi concentration varied from x = 0 to 6 in the present system. The photosensitivity of these samples varies from 1.27 to 1.13 as Bi content increases.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 21, 1 September 2009, Pages 5965–5968
Journal: Thin Solid Films - Volume 517, Issue 21, 1 September 2009, Pages 5965–5968
نویسندگان
Muneer Ahmad, P. Kumar, R. Thangaraj,