Keywords: A3 رسوبات پلی کریستالی; A1. Characterization; A3. Metalorganic chemical vapor deposition; A3. Polycrystalline deposition; B1. Gallium compounds; B1. Oxides;
مقالات ISI A3 رسوبات پلی کریستالی (ترجمه نشده)
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Orientation of Zn3P2 films via phosphidation of Zn precursors
Keywords: A3 رسوبات پلی کریستالی; A3. Polycrystalline deposition; B1. Phosphides; B2. Semiconducting materials; B3. Solar cells;
Investigation of MBE grown polycrystalline CdTe films on the Medipix readout chip
Keywords: A3 رسوبات پلی کریستالی; B1. CdTe; B3. X-ray detector; A3. Molecular beam epitaxy; A3. Polycrystalline deposition;
Enhanced electrical and optical properties of CdS:Na thin films by photochemical deposition
Keywords: A3 رسوبات پلی کریستالی; A3. Polycrystalline deposition; B1. Sulfides; B2. Semiconducting II-VI materials; B3. Solar cells;
Copper iodide synthesized by iodization of Cu-films and deposited using MOCVD
Keywords: A3 رسوبات پلی کریستالی; A3. Metalorganic chemical vapor deposition; A3. Polycrystalline deposition; B1. Halides; B2. Semiconducting materials;
Growth of thin, c-axis oriented Sr-doped LaP3O9 electrolyte membranes in condensed phosphoric acid solutions
Keywords: A3 رسوبات پلی کریستالی; A3. Polycrystalline deposition; B1. Inorganic compounds; B1. Phosphates; B1. Rare earth compounds;
Controlled sputtering of AlN (002) and (101) crystal orientations on epitaxial 3C-SiC-on-Si (100) substrate
Keywords: A3 رسوبات پلی کریستالی; A1. X-ray diffraction; A3. Polycrystalline deposition; A3. Physical vapor deposition processes; B1. Nitride; B1. Silicon carbide;
Chemical vapor deposition of Pd/Cu alloy films from a new single source precursor
Keywords: A3 رسوبات پلی کریستالی; A3. Metalorganic chemical vapor deposition; A3. Polycrystalline deposition; B1. Metals; B3 Pd-alloy membranes
Preparation and characterization of Bi-doped LuFeO3 thin films grown on LaNiO3 substrate
Keywords: A3 رسوبات پلی کریستالی; A3. Polycrystalline deposition; B1. Perovskite; B2. Dielectric material; B2. Ferroelectric materials
Morphological and structural evolution during thermally physical vapor phase growth of PbI2 polycrystalline thin films
Keywords: A3 رسوبات پلی کریستالی; A1. Atomic force microscopy; A1. Growth models; A3. Physical vapor deposition processes; A3. Polycrystalline deposition; B2. Semiconducting lead compounds;
Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation
Keywords: A3 رسوبات پلی کریستالی; A1. Crystal structure; A1. X-ray diffraction; A1. Defects; A3. Polycrystalline deposition; B2. Semiconducting II–VI materials
Obtaining phase-pure CZTS thin films by annealing vacuum evaporated CuS/SnS/ZnS stack
Keywords: A3 رسوبات پلی کریستالی; A3. Physical vapor deposition processes; A3. Polycrystalline deposition; B2. Semiconducting quaternary alloys; B3. Solar cells;
Problems in low-temperature grown polycrystalline InAs layers on glass and their relief by inserting GaSbAs buffer layers
Keywords: A3 رسوبات پلی کریستالی; A3. Molecular beam epitaxy; A3. Polycrystalline deposition; B1. Arsenide; B1. Antimonides; B2. Semiconducting III–V materials
Some physical effects of reaction rate on PbS thin films obtained by chemical bath deposition
Keywords: A3 رسوبات پلی کریستالی; A1. X-ray diffraction; A2. Growth from solutions; A3. Polycrystalline deposition; B2. Semiconducting materials;
An energy-dispersive X-ray diffraction study of the nickel-sulfide assisted growth of RuS2 thin films by reactive magnetron sputtering
Keywords: A3 رسوبات پلی کریستالی; A1. Energy dispersive X-ray diffraction; A1. Ni-enhanced crystal growth; A3. Polycrystalline deposition; A3. Sputtering; B1. Laurite; B1. Sulfides; B2. Semiconducting II–VI materials
Development of the Cu2ZnSnSe4 absorption layer with “passivated” large grains for a thin-film solar cell device
Keywords: A3 رسوبات پلی کریستالی; A1. Morphological stability; A3. Polycrystalline deposition; B1. Cuprates; B2. Semiconducting materials; B3. Solar cells
Optimization of thermal treatment of vapor-deposited thiophene/phenylene co-oligomer films
Keywords: A3 رسوبات پلی کریستالی; A1. Crystal morphology; A2. Growth from vapor; A3. Polycrystalline deposition; B1. Organic compounds; B3. Field effect transistors; B3. Light emitting diodes
Temperature dependence of crystalline SiGe growth on sapphire (0001) substrates by sputtering
Keywords: A3 رسوبات پلی کریستالی; A1. Crystal structure; A2. Single-crystal growth; A3. Polycrystalline deposition; B2. Semiconducting materials
Properties of nitrogen-doped titanium oxides
Keywords: A3 رسوبات پلی کریستالی; A1. Characterization; A1. Doping; A3. Polycrystalline deposition; B1. Oxides; B1. Titanium compounds;
Conductivity enhancement by fluorine doping in boron-doped ZnO thin films deposited by the electrospraying method
Keywords: A3 رسوبات پلی کریستالی; A1. Doping; A1. Nanostructures; A2. X-ray diffraction; A3. Polycrystalline deposition; B1. Zinc compounds; B2. Semiconducting materials
Using an electrochemical technique to study the effective variables on morphology and deposition of CaCO3 and BaSO4 at the metal surface
Keywords: A3 رسوبات پلی کریستالی; A1. Crystal morphology; A3. Polycrystalline deposition; B1. Barium compound; B1. Calcium compound;
Thin films of a ferroelectric phenazine/chloranilic acid organic cocrystal
Keywords: A3 رسوبات پلی کریستالی; A3. Physical vapor deposition processes; A3. Polycrystalline deposition; B1. Organic compounds; B2. Dielectric materials; B2. Ferroelectric materials
Long wavelength infrared detection using amorphous InSb and InAs0.3Sb0.7
Keywords: A3 رسوبات پلی کریستالی; A3. Polycrystalline deposition; B1. Antimonides; B1. Arsenates; B2. Semiconducting ternary compounds; B3. Infrared devices;
Low temperature deposition of crystalline silicon on glass by hot wire chemical vapor deposition
Keywords: A3 رسوبات پلی کریستالی; A3. Chemical vapor deposition processes; A3. Polycrystalline deposition; B2. Semiconducting silicon; B3. Solar cells
Crystal growth of MgO thin films deposited on ZnO underlayers by magnetron sputtering
Keywords: A3 رسوبات پلی کریستالی; A1. Atomic force microscopy; A1. X-ray diffraction; A3. Physical vapor deposition processes; A3. Polycrystalline deposition; B1. Oxides; B2. Dielectric materials
Gallium nitride powders: Mechanism of ammonothermal synthesis, ball-mill assisted rare earth doping and uniform electrophoretic deposition
Keywords: A3 رسوبات پلی کریستالی; A1. Growth models; A1. Doping; A3. Polycrystalline deposition; B1. Nanomaterials; B2. Phosphors; B2. Semiconducting III–V materials
A phase-field model for polycrystalline thin film growth
Keywords: A3 رسوبات پلی کریستالی; A1. Phase-field modelling; B1. Zeolite films; A3. Polycrystalline deposition; A2. Hydrothermal crystal growth
Preparation and characterization of BiFeO3/LaNiO3 heterostructure films grown on silicon substrate
Keywords: A3 رسوبات پلی کریستالی; A3. Polycrystalline deposition; B1. Perovskite; B2. Ferroelectric materials; B2. Dielectric material.
Structure and growth morphology of Gd2O3-doped CeO2 thin films
Keywords: A3 رسوبات پلی کریستالی; A3. Polycrystalline deposition; B1. Gd2O3-doped CeO2 thin film; A1. X-ray diffraction; A1. Atomic force microscopy
Characterization of (In1−xAlx)2S3 thin films grown by co-evaporation
Keywords: A3 رسوبات پلی کریستالی; A3. Co-evaporation; A3. Polycrystalline deposition; B1. Sulfides; B3. Solar cells
Fabrication of nano-crystalline silicon thin film at low temperature by using a neutral beam deposition method
Keywords: A3 رسوبات پلی کریستالی; A1. Surface structure; A3. Chemical beam epitaxy; A3. Polycrystalline deposition; B1. Nanomaterials; B2. Semiconducting silicon; B3. High electron mobility transistors
Study of the structural and photoluminescence properties of CdTe polycrystalline films deposited by close-spaced vacuum sublimation
Keywords: A3 رسوبات پلی کریستالی; A1. Crystal structure; A1. X-ray diffraction; A1. Defects; A3. Polycrystalline deposition; B1. Cadmium compounds
Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(1 1 1) and GaN templates by RF sputtering
Keywords: A3 رسوبات پلی کریستالی; A1. Atomic force microscopy; A1. X-ray diffraction; A3. Polycrystalline deposition; B1. Nitrides; B2. Semiconductor III–V materials
Effect of conductive oxide buffering on structural and nanoscale electrical properties of ultrathin SrTiO3 films on Pt electrodes
Keywords: A3 رسوبات پلی کریستالی; A1. Characterization; A3. Physical vapor deposition processes; A3. Polycrystalline deposition; B1. Oxides
Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1’-methyl-ruthenocene
Keywords: A3 رسوبات پلی کریستالی; A1. Crystal morphology; A1. Substrates; A1. Roughening; A3. Chemical vapor deposition processes; A3. Atomic layer epitaxy; A3. Polycrystalline deposition
Low-temperature deposition of crystalline silicon nitride nanoparticles by hot-wire chemical vapor deposition
Keywords: A3 رسوبات پلی کریستالی; 81.07.Bc; 81.15.GhA1. Crystallites; A1. Nanostructures; A3. Chemical vapor deposition; A3. Polycrystalline deposition; B1. Silicon nitrides
The effect of RF power and deposition temperature on the structure and electrical properties of Mg4Ta2O9 thin films prepared by RF magnetron sputtering
Keywords: A3 رسوبات پلی کریستالی; A3. Polycrystalline deposition; B1. Oxides; B2. Dielectric materials
An easy sol–gel route for deposition of oriented Ln2Ti2O7 (Ln=La, Nd) films on SrTiO3 substrates
Keywords: A3 رسوبات پلی کریستالی; 61.66.Fn; 68.55.−a; 77.80.−e; 68.37.PsA1. Atomic force microscopy; A1. X-ray diffraction; A3. Polycrystalline deposition; B1. Perovskites; B2. Ferroelectric materials
Effect of laser fluence on the microstructure and dielectric properties of pulsed laser-deposited CaCu3Ti4O12 thin films
Keywords: A3 رسوبات پلی کریستالی; 81.15.Fg; 77.22.âd; 68.55.âa; A3. Polycrystalline deposition; B1. Perovskites; B2. Dielectric materials;
Characterization of MoSe2 thin film deposited at room temperature from solution phase
Keywords: A3 رسوبات پلی کریستالی; 71.20.Nr; 73.61.Le; 78.40.Fy; 78.66.LiA1. Crystal morphology; A1. X-ray diffraction; A2. Growth from solution; A3. Polycrystalline deposition; B1. Inorganic compound; B2. Semiconducting materials
Structural changes during vapor-phase deposition of polycrystalline-PbI2 films
Keywords: A3 رسوبات پلی کریستالی; 61.10.Nz; 68.55.jk; 68.37.HkB2. Semiconducting lead compounds; A3. Physical vapor deposition; A3. Polycrystalline deposition
Growth of γ-In2Se3 films on Si substrates by metal-organic chemical vapor deposition with different temperatures
Keywords: A3 رسوبات پلی کریستالی; 61.10.Nz; 81.05.HdA1. Crystal structure; A3. Metal-organic chemical vapor deposition; A3. Polycrystalline deposition; B2. Semiconducting indium compounds
Rhombohedral epitaxy of cubic SiGe on trigonal c-plane sapphire
Keywords: A3 رسوبات پلی کریستالی; 61; 61.72.Dd; 81; 81.10.−hA1. Crystal Structure; A2. Single-crystal growth; A3. Polycrystalline deposition; B2. Semiconducting materials
Effect of K-doping on the dielectric and tunable properties of Ba0.6Sr0.4TiO3 thin films prepared by RF magnetron sputtering
Keywords: A3 رسوبات پلی کریستالی; 77.22.Ch; 77.22.Gm; 77.55.+F; 81.15.Cd; A1. Crystal structure; A1. X-ray diffraction; A3. Polycrystalline deposition; B1. Perovskites; B2. Dielectric materials;
Conduction studies on chemical bath-deposited nanocrystalline CdS thin films
Keywords: A3 رسوبات پلی کریستالی; 81.07.Bc; 73.63.Bd; 72.15.Eb; 72.20.EeA1. Nanostrctures; A3. Polycrystalline deposition; B2. Semiconducting II–VI materials; B3. Solar cells
Influence of substrate temperature on the growth and optical waveguide properties of oriented LiNbO3 thin films
Keywords: A3 رسوبات پلی کریستالی; 52.38.Mf; 68.55.Jk; 67.70.+n; 74.25.GzA1. Crystal structure; A3. Laser epitaxy; A3. Polycrystalline deposition; B1. Lithium niobate; B1. Oxides; B2. Opto-electric materials
Effect of substrate on the preferred orientation of ZnO films by chemical solution deposition
Keywords: A3 رسوبات پلی کریستالی; 68.55.Jk; 68.55.−aA1. Substrates; A3. Polycrystalline deposition; B2. Piezoelectric materials
RF magnetron-sputtering deposition of pyroelectric lithium tantalate thin films on ruthenium dioxide
Keywords: A3 رسوبات پلی کریستالی; 77.70.+aA3. Physical vapor depostion processes; A3. Polycrystalline deposition; B2. Dielectric materials; B2. Ferroelectric materials; B3. Infrared devices
Hydrogen-induced dopant neutralisation in p-type AIC poly-Si seed layers functioning as buried emitters in ALICE thin-film solar cells on glass
Keywords: A3 رسوبات پلی کریستالی; 81.15.âz; 81.15.Np; 68.55.âa; 85.60.Dw; 73.50.Pz; A1. Crystal structure; A3. Aluminium-induced crystallisation; A3. Polycrystalline deposition; A3. Solid-phase epitaxy; B2. Semiconducting silicon; B3. Solar cells;
Enhancement of ferroelectricity in the compositionally graded (Pb,Sr)TiO3 thin films derived by a sol-gel process
Keywords: A3 رسوبات پلی کریستالی; 81.15.Lm; 77.22.Ch; 77.80.Bh; A1. Characterization; A3. Polycrystalline deposition; B1. Inorganic compounds; B2. Ferroelectric materials;