Long wavelength infrared detection using amorphous InSb and InAs0.3Sb0.7

► Material properties of sputtered amorphous InSb and InAs0.3Sb0.7 films are studied. ► Elevated substrate temperature produces films with (111) and (220) texturing. ► Amorphous InSb and InAs0.3Sb0.7 films deposited at 300 K show hopping conduction. ► Optically the absorption tail shows activation energies in InSb and InAs0.3Sb0.7. ► Amorphous InSb and InAs0.3Sb0.7 films showed responsivity in excess of 100 V/W.