Keywords: B3 دستگاه های مادون قرمز; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Arsenates; B2. Semiconducting III-V materials; B3. Infrared devices;
مقالات ISI B3 دستگاه های مادون قرمز (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: B3 دستگاه های مادون قرمز; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials; B3. Infrared devices; B3. Quantum cascade lasers;
Keywords: B3 دستگاه های مادون قرمز; A3. Molecular beam epitaxy; A3. Semiconducting III–V materials; B3. Heterojunction semiconductor devices; B3. Infrared devices
Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1â¯1â¯1) substrate by MOCVD
Keywords: B3 دستگاه های مادون قرمز; B1. Nanomaterials; A3. MOCVD; A2. Semiconducting III-V materials; B1. Antimonides; A1. Solubility; B3. Infrared devices;
Effects of Fe-Ni solvent with different Fe contents on the boron concentration in colorless diamonds
Keywords: B3 دستگاه های مادون قرمز; A1. Crystal morphology; A1. Impurities; A2. Single crystal growth; A2. Growth from high temperature solutions; B1. Diamond; B3. Infrared devices;
Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer
Keywords: B3 دستگاه های مادون قرمز; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III-V materials; B3. Infrared devices;
Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition
Keywords: B3 دستگاه های مادون قرمز; A1. X-ray diffraction; A1. Atomic force microscopy; A3. Metalorganic chemical vapor deposition; A3. Superlattices; B1. Antimonides; B3. Infrared devices;
Hg1âxCdxTe vapor deposition on CdZnTe substrates by Closed Space Sublimation technique
Keywords: B3 دستگاه های مادون قرمز; A3. Physical vapor deposition processes; B1. Cadmium compounds; B1. CdZnTe; B1. HgCdTe; B2. Semiconducting materials; B3. Infrared devices;
Room temperature operating InAsSb-based photovoltaic infrared sensors grown by metalorganic vapor phase epitaxy
Keywords: B3 دستگاه های مادون قرمز; A1. Characterization; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B2. Semiconducting indium compounds; B3. Infrared devices;
Beryllium compensation doped InGaAs/GaAsSb superlattice photodiodes
Keywords: B3 دستگاه های مادون قرمز; B3. Infrared devices; B1. Antimonides; A3. Superlattices; A1. Doping;
Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100)
Keywords: B3 دستگاه های مادون قرمز; A1. Nanostructures; A1. Surfaces; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B3. Infrared devices;
Properties of heavily impurity-doped PbSnTe liquid-phase epitaxial layers grown by the temperature difference method under controlled Te vapor pressure
Keywords: B3 دستگاه های مادون قرمز; A1. Doping; A1. Impurities; A3. Liquid phase epitaxy; B2. Semiconducting lead compounds; B3. Infrared devices;
Growth of quantum three-dimensional structure of InGaAs emitting at ~1 µm applicable for a broadband near-infrared light source
Keywords: B3 دستگاه های مادون قرمز; A3.Molecular beam epitaxy; B1.Nanomaterials; B2.Semiconducting III-V materials; B3. Infrared devices;
InSb/InAs/InGa(Al)As/GaAs(0 0 1) metamorphic nanoheterostructures grown by MBE and emitting beyond 3 μm
Keywords: B3 دستگاه های مادون قرمز; B2. Semiconducting III-V materials; B1. Antimonides; A3. Molecular beam epitaxy; A3. Quantum wells; B3. Infrared devices;
Influence of growth conditions on the structural and opto-electronic quality of GaAsBi
Keywords: B3 دستگاه های مادون قرمز; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Bismuth compounds; B2. Semiconducting ternary compounds; B3. Heterojunction semiconductor devices; B3. Infrared devices;
Crystal growth and characterization of undoped and Dy-doped TlPb2Br5 for infrared lasers and nuclear radiation detection
Keywords: B3 دستگاه های مادون قرمز; A2. Bridgman technique; A1. Doping; B1. Halides; B1. Semiconducting material; B3. Infrared devices;
Sensitivity of heterointerfaces on emission wavelength of quantum cascade lasers
Keywords: B3 دستگاه های مادون قرمز; A1. Interfaces; A1. Segregation; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Infrared devices;
Quantitative study of the effect of deposition temperature on antimony incorporation in InAs/InAsSb superlattices
Keywords: B3 دستگاه های مادون قرمز; A. Diffusion; A3. Superlattices; A3. Molecular beam epitaxy; B3. Infrared devices;
MBE-grown long-wavelength interband cascade lasers on InAs substrates
Keywords: B3 دستگاه های مادون قرمز; A3. Molecular beam epitaxy; B1. Antimonides; B2. III-V materials; B3. Infrared devices; B3. Laser diodes;
Comparison of semi-insulating InAlAs and InP:Fe for InP-based buried-heterostructure QCLs
Keywords: B3 دستگاه های مادون قرمز; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B3. Heterojunction semiconductor devices; B3. Infrared devices;
Growth of InAs-InAsSb SLS through the use of digital alloys
Keywords: B3 دستگاه های مادون قرمز; A3. Molecular beam epitaxy; B3. Infrared devices; B2. Semiconducting III-V materials; B1. Nanomaterials;
Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon
Keywords: B3 دستگاه های مادون قرمز; A1. Defects; A3. Chemical vapor deposition process; B2. Semiconducting germanium; B3. Infrared devices;
LPE growth and characterization of InAs1−xNx films
Keywords: B3 دستگاه های مادون قرمز; A1. X-ray diffraction; A3. Liquid phase epitaxy; B2. Semiconducting III–V materials; B3. Infrared devices
Effects of continuously or step-continuously graded buffer on the performance of wavelength extended InGaAs photodetectors
Keywords: B3 دستگاه های مادون قرمز; A1. Defects; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B3. Infrared devices;
Quantitative estimation of density of Bi-induced localized states in GaAs1âxBix grown by molecular beam epitaxy
Keywords: B3 دستگاه های مادون قرمز; A1. Defects; A3. Molecular beam epitaxy; B1. Bismuth compounds; B2. Semiconducting III-V materials; B3. Infrared devices;
Semi-insulating InP:Fe for buried-heterostructure strain-compensated quantum-cascade lasers grown by gas-source molecular-beam epitaxy
Keywords: B3 دستگاه های مادون قرمز; A3. Molecular-beam epitaxy; B2. Semiconducting III–V materials; B3. Heterojunction semiconductor devices; B3. Infrared devices
Growth condition dependence of Ge-doped β-FeSi2 epitaxial film by molecular beam epitaxy
Keywords: B3 دستگاه های مادون قرمز; A1. Crystal morphology; A1. Doping; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B2. Semiconducting silicon compounds; B3. Infrared devices;
Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE
Keywords: B3 دستگاه های مادون قرمز; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III–V materials; B3. Infrared devices; B3. Solar cells
High power (>5 W) λâ¼9.6 μm tapered quantum cascade lasers grown by OMVPE
Keywords: B3 دستگاه های مادون قرمز; A1. Interfaces; A3. Metalorganic vapor phase epitaxy; A3. Superlattices; B2. Semiconducting III-V materials; B3. Quantum cascade lasers; B3. Infrared devices;
Analysis of thermal cycle-induced dislocation reduction in HgCdTe/CdTe/Si(211) by scanning transmission electron microscopy
Keywords: B3 دستگاه های مادون قرمز; A1. Characterization; A1. Defects; A3. Molecular beam epitaxy; B2. Semiconducting II–VI materials; B2. Semiconducting mercury compounds; B3. Infrared devices
InAsSb-based XBnn bariodes grown by molecular beam epitaxy on GaAs
Keywords: B3 دستگاه های مادون قرمز; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting indium compounds; B3. Infrared devices
LPE growth and characterization of mid-infrared InAs0.85Sb0.15 film on InAs substrate
Keywords: B3 دستگاه های مادون قرمز; A1. X-ray diffraction; A3. Liquid phase epitaxy; B2. Semiconducting III–V materials; B3. Infrared devices
Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors
Keywords: B3 دستگاه های مادون قرمز; A1. Low dimensional structures; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials; B3. Infrared devices;
Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (0Â 0Â 1) substrates for electronic and optoelectronic device applications
Keywords: B3 دستگاه های مادون قرمز; A1. X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting II-VI materials; B3. Infrared devices;
Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization
Keywords: B3 دستگاه های مادون قرمز; A1. Defects; A3. Molecular beam epitaxy; A3. Superlattices; B1. Antimonides; B2. Semiconducting III-V materials; B3. Infrared devices;
Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition
Keywords: B3 دستگاه های مادون قرمز; A1. Characterization; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III–V materials; B3. Infrared devices; B3. Laser diodes
Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1−y metamorphic buffer layers on InP substrates
Keywords: B3 دستگاه های مادون قرمز; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Arsenides; B1. Phosphides; B1. Indium compounds; B3. Infrared devices
Long wavelength infrared detection using amorphous InSb and InAs0.3Sb0.7
Keywords: B3 دستگاه های مادون قرمز; A3. Polycrystalline deposition; B1. Antimonides; B1. Arsenates; B2. Semiconducting ternary compounds; B3. Infrared devices;
Synthesis and characterization of strip-shape diamonds from Fe-based alloy and graphite system under high pressure and high temperature
Keywords: B3 دستگاه های مادون قرمز; A1. Characterization; A1. Crystal morphology; B1. Diamond; B3. Infrared devices
Characteristics of mid-IR-emitting deep-well quantum cascade lasers grown by MOCVD
Keywords: B3 دستگاه های مادون قرمز; A1. Nanostructures; A3. Metalorganic chemical vapor deposition; A3. Semiconducting III-V materials; B3. Infrared devices
MBE growth and transport properties of silicon δ-doped GaAs/AlAs quantum well structures for terahertz frequency detection
Keywords: B3 دستگاه های مادون قرمز; A1. Characterization; A3. Molecular beam epitaxy; B2. Semiconducting gallium compounds; B3. Infrared devices;
High quality of InAsSb epilayer with cutoff wavelength longer than 10 μm grown on GaAs by the modified LPE technique
Keywords: B3 دستگاه های مادون قرمز; 81.05.Ea; 81.15.Lm; 85.60.Bt; 85.60.GzA3. Liquid phase epitaxy; B1. Antimonides; B2. Semiconducting III–V Materials; B3. Infrared devices
MBE growth of active regions for electrically pumped, cw-operating GaSb-based VCSELs
Keywords: B3 دستگاه های مادون قرمز; 42.55.Px; 73.63.HsA1. Computer simulation; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Antimonides; B2. Semiconducting quaternary alloys; B3. Infrared devices; B3. Laser diodes
High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6 μm
Keywords: B3 دستگاه های مادون قرمز; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III–V materials; B3. Heterojunction semiconductor devices; B3. Infrared devices
Development of uncooled miniaturized InSb photovoltaic infrared sensors for temperature measurements
Keywords: B3 دستگاه های مادون قرمز; 07.57.Kp; 81.05.Ea; 81.15.Hi; 85.60.Gz; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting indium compounds; B3. Infrared devices;
Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures
Keywords: B3 دستگاه های مادون قرمز; 81.05.Ea; 81.15.Hi; 85.60.GzA3. Molecular beam epitaxy; B2. Semiconducting III–V materials; B3. Infrared devices
Terahertz quantum cascade lasers based on In0.53Ga0.47As/In0.52Al0.48As/InPIn0.53Ga0.47As/In0.52Al0.48As/InP
Keywords: B3 دستگاه های مادون قرمز; A1. Superlattices; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials; B3. Infrared devices; B3. Laser diodes42.55.Px; 73.21.Cd; 71.55.Eq
Molecular beam epitaxy of highly antimony doped germanium on silicon
Keywords: B3 دستگاه های مادون قرمز; 81.15.Hi; 61.72.ufA1. Segregation; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B2. Semiconducting germanium; B3. Infrared devices
Growth of InAsSb/InPSb heterojunctions for mid-IR detector applications
Keywords: B3 دستگاه های مادون قرمز; 81.05.Ea; 81.15.Gh; 85.60.Bt; 85.60.GzA3. Metalorganic vapor phase epitaxy; B1. Antimonides; B2. Semiconducting III–V materials; B3. Infrared devices
Role of thermal expansion matching in CdTe heteroepitaxy on highly lattice-mismatched substrates
Keywords: B3 دستگاه های مادون قرمز; 81.05.Dz; 81.15.Hi; 68.60.Dv; 61.72.FfA1. Stresses; A1. Substrates; A3. Molecular beam epitaxy; B1. Cadmium compounds; B2. Semiconducting II–VI materials; B3. Infrared devices