کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794249 | 1023693 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Development of uncooled miniaturized InSb photovoltaic infrared sensors for temperature measurements
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Development of uncooled miniaturized InSb photovoltaic infrared sensors for temperature measurements Development of uncooled miniaturized InSb photovoltaic infrared sensors for temperature measurements](/preview/png/1794249.png)
چکیده انگلیسی
This paper reports the development of an InSb photovoltaic infrared sensor (InSb PVS) operating at room temperature for temperature measurements. The InSb PVS consists of 910 InSb p+-pâ-n+ photodiodes connected in series on a semi-insulating GaAs (1 0 0) substrate. An Al0.17In0.83Sb barrier layer was grown between the p+ and pâ layers to reduce the diffusion of photo-excited electrons. As the InSb PVS operates in a photovoltaic mode, no thermal insulation is required, enabling its miniaturized plastic molding package. The sensitivity of the InSb PVS was 127 μV/K, and a noise equivalent temperature difference (NETD) of 1.0 mK/Hz1/2 was obtained at room temperature. The results demonstrate the potential for the sensor to be used both in non-contact thermometry, as well as human body detection.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 7, 15 March 2009, Pages 1889-1892
Journal: Journal of Crystal Growth - Volume 311, Issue 7, 15 March 2009, Pages 1889-1892
نویسندگان
N. Kuze, T. Morishita, E.G. Camargo, K. Ueno, A. Yokoyama, M. Sato, H. Endo, Y. Yanagita, S. Tokuo, H. Goto,