Keywords: B1 آنتیبادیدها; A3. Superlattices; A3. Molecular beam epitaxy; B1. Antimonides; B3. Infrared detector;
مقالات ISI B1 آنتیبادیدها (ترجمه نشده)
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Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1â¯1â¯1) substrate by MOCVD
Keywords: B1 آنتیبادیدها; B1. Nanomaterials; A3. MOCVD; A2. Semiconducting III-V materials; B1. Antimonides; A1. Solubility; B3. Infrared devices;
Critical V/III dependence of formation of high density GaSb/GaAs quantum dots grown by AP-MOVPE
Keywords: B1 آنتیبادیدها; A3. Metalorganic vapour phase epitaxy; B1. Antimonides; B1. Gallium compounds; A1. Nanostructures; A1. Atomic force microscopy; A1. Surface processes;
Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate
Keywords: B1 آنتیبادیدها; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Antimonides; B1. Gallium arsenide substrate; B2. Semiconducting III-V materials;
X-ray and Raman determination of InAsSb mole fraction for x <0.5
Keywords: B1 آنتیبادیدها; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III-V materials;
Fabrication of InAs quantum ring nanostructures on GaSb by droplet epitaxy
Keywords: B1 آنتیبادیدها; A1. Low dimensional structure; A1. InAs nanostructures; A1. In-migration; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III-V materials;
Interactions between Sb and As on InAs(0â¯0â¯1) surfaces
Keywords: B1 آنتیبادیدها; A1. Surface structure; A1. Phase diagrams; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III-V materials;
Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer
Keywords: B1 آنتیبادیدها; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III-V materials; B3. Infrared devices;
Careful stoichiometry monitoring and doping control during the tunneling interface growth of an nâ¯+â¯InAs(Si)/pâ¯+â¯GaSb(Si) Esaki diode
Keywords: B1 آنتیبادیدها; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III-V materials; B3. Esaki tunnel diodes; B3. Tunnel field effect transistors;
Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD
Keywords: B1 آنتیبادیدها; A1. Interfaces; A3. Metal organic chemical vapor deposition; B1. Nanomaterials; B1. Antimonides; B2. Semiconducting III-V materials; B3. Heterojunction semiconductor devices;
Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition
Keywords: B1 آنتیبادیدها; A1. X-ray diffraction; A1. Atomic force microscopy; A3. Metalorganic chemical vapor deposition; A3. Superlattices; B1. Antimonides; B3. Infrared devices;
Room temperature operating InAsSb-based photovoltaic infrared sensors grown by metalorganic vapor phase epitaxy
Keywords: B1 آنتیبادیدها; A1. Characterization; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B2. Semiconducting indium compounds; B3. Infrared devices;
Beryllium compensation doped InGaAs/GaAsSb superlattice photodiodes
Keywords: B1 آنتیبادیدها; B3. Infrared devices; B1. Antimonides; A3. Superlattices; A1. Doping;
Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition
Keywords: B1 آنتیبادیدها; A3. Molecular beam epitaxy; A3. Atomic layer deposition; B1. Antimonides; B2. Sb-based semiconductors;
Optimization of metamorphic buffers for MBE growth of high quality AlInSb/InSb quantum structures: Suppression of hillock formation
Keywords: B1 آنتیبادیدها; A1. Surface morphology; A1. Dislocation filtering; A3. Metamorphic buffers; A3. Molecular beam epitaxy; B1. Antimonides;
Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy
Keywords: B1 آنتیبادیدها; A1. Doping; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III-V materials; B3. Laser diodes;
Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer
Keywords: B1 آنتیبادیدها; A1. Heteroepitaxy; A1. X-ray diffraction; A2. Molecular beam epitaxy; B1. Antimonides; B1. Silicon substrate; B2. Semiconducting III-V materials;
InSb/InAs/InGa(Al)As/GaAs(0 0 1) metamorphic nanoheterostructures grown by MBE and emitting beyond 3 μm
Keywords: B1 آنتیبادیدها; B2. Semiconducting III-V materials; B1. Antimonides; A3. Molecular beam epitaxy; A3. Quantum wells; B3. Infrared devices;
Molecular beam epitaxy of strained-layer InAs/GaInSb superlattices for long-wavelength photodetectors
Keywords: B1 آنتیبادیدها; A3. Molecular beam epitaxy; A3. Superlattices; B1. Antimonides; B3. Heterojunction semiconducting devices; A1. Characterization; A1. X-ray diffraction;
Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates
Keywords: B1 آنتیبادیدها; A1. Defects; A1. Interfaces; A3. Molecular beam epitaxy; B1. Antimonides; B1. Tellurides; B2. Semiconducting II–VI
Topography and structure of ultrathin topological insulator Sb2Te3 films on Si(111) grown by means of molecular beam epitaxy
Keywords: B1 آنتیبادیدها; A1. Crystal morphology; A1. Atom probe tomography; A3. Molecular beam epitaxy; B1. Antimonides; B1. Tellurides; B2. Topological insulator
Determination of composition and energy gaps of GaInNAsSb layers grown by MBE
Keywords: B1 آنتیبادیدها; A1. Characterization; A3. Molecular beam epitaxy; B1. Antimonides; B1. Nitrides; B2. Semiconducting III–V materials
Bi flux-dependent MBE growth of GaSbBi alloys
Keywords: B1 آنتیبادیدها; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Antimonides; B1. Bismuth compounds; B1. Gallium compounds; B2. Semiconducting III-V materials;
Nanoheterostructures with InSb quantum dashes inserted in the InAs unipolar matrix
Keywords: B1 آنتیبادیدها; A1. Interfaces; A1. Nanostructures; A1. Atomic force microscopy; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B2. Semiconducting III–V materials
High-quality InSb growth by metalorganic vapor phase epitaxy
Keywords: B1 آنتیبادیدها; A1. Characterization; A1. Impurities; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B2. Semiconducting III–V materials
Desorption mass spectrometry: Revisiting the in-situ calibration technique for mixed group-V alloy MBE growth of ~3.3 µm diode lasers
Keywords: B1 آنتیبادیدها; A3. Molecular beam epitaxy; A3. In-situ monitoring; A3. Desorption mass spectrometry; B1. Antimonides; B2. Semiconducting quaternary alloys; B3. Laser diodes;
MBE-grown long-wavelength interband cascade lasers on InAs substrates
Keywords: B1 آنتیبادیدها; A3. Molecular beam epitaxy; B1. Antimonides; B2. III-V materials; B3. Infrared devices; B3. Laser diodes;
InAs nanowires with AlxGa1âxSb shells for band alignment engineering
Keywords: B1 آنتیبادیدها; A1. Crystal structure; A1. Defects; A3. Molecular beam epitaxy; B1. Antimonides; B1. Nanomaterials; B3. Field effect transistors;
Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process
Keywords: B1 آنتیبادیدها; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III–V materials
Effect of antimony on growth mode and properties of thick InGaN layers
Keywords: B1 آنتیبادیدها; A1. Crystal morphology; A1. Surface processes; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Nitrides; B2. Semiconducting III–V materials
Silicon surface preparation for III-V molecular beam epitaxy
Keywords: B1 آنتیبادیدها; A1. Substrates; A3. Molecular beam epitaxy; B1. Antimonides; B2. III-V Compounds; B2. Silicon
Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots
Keywords: B1 آنتیبادیدها; A1. Low dimensional structures; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III–V materials
Interface effect on structural and optical properties of type II InAs/GaSb superlattices
Keywords: B1 آنتیبادیدها; A1. Interface; A1. Low dimensional structures; A1. Stresses; A3. Molecular beam epitaxy; B1. Antimonides
MOCVD-grown compressively strained C-doped InxGa1âxAs1âySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs
Keywords: B1 آنتیبادیدها; A3. Metalorganic chemical vapor deposition; B1. Antimonides; B3. Bipolar transistors;
Properties of 'bulk' GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration
Keywords: B1 آنتیبادیدها; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Nitrides; B2. Semiconducting III V materials; B3. Solar cells;
Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application
Keywords: B1 آنتیبادیدها; A1. Substrates; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Nitrides; B2. Semiconducting III V materials; B3. Solar cells
The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy
Keywords: B1 آنتیبادیدها; A1. Nanostructures; A3. Crystal morphology; A3. Metal organic chemical vapor deposition; B1. Antimonides; B2. Semiconducting ternary compounds
Impact of strained GaAs spacer between InP emitter and GaAs1−ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1−ySby/InP DHBTs
Keywords: B1 آنتیبادیدها; A3. Metalorganic chemical vapor deposition; B1. Antimonides; B3. Bipolar transistors
Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix
Keywords: B1 آنتیبادیدها; A1. Transmission electron microscopy; A1. Low dimensional structures; A3. Liquid phase epitaxy; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B3. Semiconducting indium compounds;
Temperature dependent lattice constant of InSb above room temperature
Keywords: B1 آنتیبادیدها; A1. Crystal structure; A1. High-resolution X-ray diffraction; A1. Substrates; B1. Antimonides; B2. Semiconducting indium compounds; B2. Semiconducting III-V materials;
Carbon doping in InGaAsSb films on (001) InP substrate using CBr4 grown by metalorganic chemical vapor deposition
Keywords: B1 آنتیبادیدها; A1. Doping; A3. Metalorganic chemical vapor deposition; B1. Antimonides; B2. Semiconducting quarternary alloys; B3. Bipolar transistors;
Problems in low-temperature grown polycrystalline InAs layers on glass and their relief by inserting GaSbAs buffer layers
Keywords: B1 آنتیبادیدها; A3. Molecular beam epitaxy; A3. Polycrystalline deposition; B1. Arsenide; B1. Antimonides; B2. Semiconducting III–V materials
Sb irradiation effect on growth of GaAs thin film on Si (111) substrate
Keywords: B1 آنتیبادیدها; A1. Crystal morphology; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting gallium arsenide
Growth of heterostructures on InAs for high mobility device applications
Keywords: B1 آنتیبادیدها; A1. Atomic force microscopy; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting ternary compounds; B2. Semiconducting indium compounds
GaInAs/GaAsSb-based type-II micro-cavity LED with 2–3 μm light emission grown on InP substrate
Keywords: B1 آنتیبادیدها; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Phosphides; B2. Semiconducting III–V materials; B3. Light emitting diodes
AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3 μm grown by MOVPE on InP substrate
Keywords: B1 آنتیبادیدها; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Phosphides; B2. Semiconducting III–V materials; B3. Laser diodes
Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)
Keywords: B1 آنتیبادیدها; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Nitrides; B2. Semiconducting III–V materials; B3. Solar cells
Study of Sb template for heteroepitaxial growth of GaSb thin film on Si(111)substrate
Keywords: B1 آنتیبادیدها; A1. Crystal structure; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Antimonides
AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation
Keywords: B1 آنتیبادیدها; A2. Growth from vapour; A3. Metal organic vapour phase epitaxy; B1. Antimonides; B2. Semiconducting III-V materials;
MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures
Keywords: B1 آنتیبادیدها; A1. Crystal structure; A3. Metalorganic chemical vapor deposition; A3. Organometallic vapor phase epitaxy; B1. Nanomaterials; B1. Antimonides; B3. Heterojunction semiconductor devices