AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation

► GaSb and Ga1−xInxSb layers were grown with different V/III ratios at 550 °C. ► Triethylgallium, trimethylantimony and trimethylindium were used as precursors.► All the growth runs were performed under atmospheric pressure. ► The dependence of the quality of the layers on the V/III ratio was investigated. ► An increase in the V/III yields an increase in the incorporation of indium into GaSb.