AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3 μm grown by MOVPE on InP substrate

In this paper we present the first InP-based short-cavity Vertical-Cavity Surface-Emitting Laser with an AlGaInAsP/GaInAsP active region and a re-grown and structured GaAs0.51Sb:C/Ga0.47InAs:Si buried tunnel junction (BTJ), which serves as current aperture, grown by LP-MOVPE. We achieved over 1 mW single-mode continuous-wave (cw) emission at around 1.3 μm wavelength and room-temperature. The small-signal modulation bandwidth exceeds 7.5 GHz, which is appropriate for 10 Gb/s data transmission, and the series resistance is as low as 24 Ω. The latter value indicates around three times lower dissipated power consumption than comparable MOVPE grown InP-based VCSELs.

► First realization of InP-based VCSEL with structured and regrown GaAsSb/GaInAs BTJ.
► Type-II band alignment drastically reduces tunneling resistance.
► Device resistance is as low as 24 Ω.
► Modulation bandwidth over 7.5 GHz show that 10 Gb/s data transmission is possible.
► 1.3 μm laser wavelength suitable for passive optical network (PON).