Keywords: B3 دیودهای لیزری; A1. Interfaces; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III–V materials; B3. Laser diodes
مقالات ISI B3 دیودهای لیزری (ترجمه نشده)
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Structure optimization of 266â¯nm Al0.53GaN/Al0.75GaN SQW DUV-LD
Keywords: B3 دیودهای لیزری; B2. Semiconducting aluminum compounds; B3. Laser diodes; B3. Heterojunction semiconductor devices; A3. Quantum wells;
Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120â¯nm and 1180â¯nm
Keywords: B3 دیودهای لیزری; A1. Defects; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Laser diodes;
Spectroscopic, thermal, and laser properties of disordered garnet Nd:CLTGG crystal
Keywords: B3 دیودهای لیزری; A1. X-ray diffraction; A2. Czochralski method; B3. Laser diodes; B3. Solid state lasers;
Growth of InGaAs/GaAs nanowire-quantum dots on AlGaAs/GaAs distributed Bragg reflectors for laser applications
Keywords: B3 دیودهای لیزری; A3. Metalorganic vapor phase epitaxy; A3, Selective epitaxy; B2. Semiconductor III-V materials; B3. Laser diodes;
Ga originated kink-and-tail Zn diffusion profiles in InGaAsP and InGaAlAs alloys during MOVPE regrowth
Keywords: B3 دیودهای لیزری; A1. Diffusion; A3. Metalorganic vapor phase epitxy; B2. Semiconducting III-V materials; B3. Laser diodes;
Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning
Keywords: B3 دیودهای لیزری; A3. Metalorganic vapor phase epitaxy; A1. Nanostructures; A3. Selective epitaxy; A1. Etching; B3. Laser diodes;
Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy
Keywords: B3 دیودهای لیزری; A1. Doping; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III-V materials; B3. Laser diodes;
Crystal growth of HVPE-GaN doped with germanium
Keywords: B3 دیودهای لیزری; A1. Doping; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials; B3. Laser diodes;
Micro-crystallization and spectroscopic properties of Er, Yb:RAl-borates (R=Y, Gd) obtained in RAl3(BO3)4-K2Mo3O10-B2O3-R2O3 and RAl3(BO3)4-B2O3 systems
Keywords: B3 دیودهای لیزری; A2. Growth from high temperature solutions; B1. Borates; B2. Nonlinear optic materials; B3. Laser diodes; B3. Nonlinear optical;
Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides
Keywords: B3 دیودهای لیزری; B3. Laser diodes; B2. Semiconducting III-V materials; A3. Molecular beam epitaxy; B1. Arsenates;
Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
Keywords: B3 دیودهای لیزری; A2. Metalorganic chemical vapor deposition; B1. Nitride; B2. Semiconductor III–V materials; B3. Laser diodes
MOVPE growth of laser structures for high-power applications at different ambient temperatures
Keywords: B3 دیودهای لیزری; A1. Interfaces; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Laser diodes;
Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission
Keywords: B3 دیودهای لیزری; A1. Crystal structure; A3. Metalorganic chemical vapor deposition; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III-V materials; B3. Laser diodes
MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates
Keywords: B3 دیودهای لیزری; A3. Metalorganic vapor phase epitaxy; B1. Dilute nitrides; B2. Semiconducting III–V materials; B3. Laser diodes
HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cutâ¢
Keywords: B3 دیودهای لیزری; A3. Smart Cutâ¢; A3. Hydride vapor phase epitaxy; B1. GaN; B1. Nitrides; B2. Semiconducting III-V materials; B3. Laser diodes;
MBE-grown long-wavelength interband cascade lasers on InAs substrates
Keywords: B3 دیودهای لیزری; A3. Molecular beam epitaxy; B1. Antimonides; B2. III-V materials; B3. Infrared devices; B3. Laser diodes;
Desorption mass spectrometry: Revisiting the in-situ calibration technique for mixed group-V alloy MBE growth of ~3.3 µm diode lasers
Keywords: B3 دیودهای لیزری; A3. Molecular beam epitaxy; A3. In-situ monitoring; A3. Desorption mass spectrometry; B1. Antimonides; B2. Semiconducting quaternary alloys; B3. Laser diodes;
Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 µm
Keywords: B3 دیودهای لیزری; A3. Molecular beam epitaxy; B1. Arsenates; B2. Semiconducting III-V materials; B3. Laser diodes;
Stable growth of ruthenium doped InP at the current blocking layer for buried-heterostructure lasers
Keywords: B3 دیودهای لیزری; A3. Metalorganic vapor phase epitaxy; B1. Phosphides; B3. Laser diodes
MOVPE growth of Ga(AsBi)/GaAs using different metalorganic precursors
Keywords: B3 دیودهای لیزری; A1. Characterization; A1. Crystal morphology; A2. Metalorganic chemical vapour deposition; B1. Bismuth compounds; B2. Semiconducting III–V materials; B3. Laser diodes
Investigation on the lasing characteristics of InAs/InGaAsP quantum dots with additional confinement structures
Keywords: B3 دیودهای لیزری; A1. Quantum dots; B2. InAs; B2. InGaAsP; B3. Laser diodes;
GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 µm
Keywords: B3 دیودهای لیزری; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Quantum dots; B1. Nanomaterials; B2. Semiconducting III-V materials; B3. Laser diodes;
Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes
Keywords: B3 دیودهای لیزری; A1. Interfaces; A2. Metalorganic chemical vapor deposition; A3. Quantum wells; B1. Nitrides; B2. Semiconducting indium compounds; B3. Laser diodes
Modeling and process control of MOCVD growth of InAlGaAs MQW structures on InP
Keywords: B3 دیودهای لیزری; A3. Metalorganic chemical vapor deposition; A3. Organometallic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Heterojunction semiconductor devices; B3. Laser diodes;
In-situ etching of patterned GaAs/InGaP surfaces for highly efficient 975 nm DFB-BA diode lasers
Keywords: B3 دیودهای لیزری; A1. Secondary ion mass spectroscopy; A1. Scanning transmission electron microscopy; A1. In-situ etching; A3. Metalorganic vapour phase epitaxy; B3. Laser diodes
Optical properties of InAsSbN single quantum wells grown on InP substrates for 2-μm-wavelength region
Keywords: B3 دیودهای لیزری; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nanomaterials; B2. Semiconducting III-V materials; B3. Laser diodes;
Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition
Keywords: B3 دیودهای لیزری; A3. Quantum dots; A3. Metalorganic chemical vapor deposition; B2. InP; B3. Laser diodes
MOVPE-grown AlxGa1−xAsyP1−y strain compensating layers on GaAs
Keywords: B3 دیودهای لیزری; A1. High resolution X-ray diffraction; A1. In-situ curvature measurements; A3. Metalorganic vapor phase epitaxy; B3. Laser diodes
AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3 μm grown by MOVPE on InP substrate
Keywords: B3 دیودهای لیزری; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Phosphides; B2. Semiconducting III–V materials; B3. Laser diodes
MOVPE growth of Al0.85Ga0.15As for high power laser diodes emitting at 808 nm
Keywords: B3 دیودهای لیزری; A1. Interfaces; A3. Metallorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III–V materials; B3. Laser diodes
MBE fabrication of III-N-based laser diodes and its development to industrial system
Keywords: B3 دیودهای لیزری; A3. Molecular beam epitaxy; B1. Nitrides; B3. Laser diodes;
Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
Keywords: B3 دیودهای لیزری; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting indium compounds; B2. Semiconducting ternary compounds; B3. Laser diodes
Characterization and optimization of 2-step MOVPE growth for single-mode DFB or DBR laser diodes
Keywords: B3 دیودهای لیزری; A1. Interfaces; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Laser diodes;
InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates
Keywords: B3 دیودهای لیزری; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B3. Laser diodes
Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition
Keywords: B3 دیودهای لیزری; A1. Characterization; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III–V materials; B3. Infrared devices; B3. Laser diodes
Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition
Keywords: B3 دیودهای لیزری; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III–V materials; B3. Laser diodes
Strained GaAsSb/GaAs QW structures grown by MBE on GaAs (1 0 0) for applications near 1.3 micron
Keywords: B3 دیودهای لیزری; 81.15.Hi; 81.15.Aa; 78.67.De; 85.35.Be; 81.07.StA3. Molecular beam epitaxy; A3. Quantum wells; B1. Antimonides; B3. Laser diodes
InAsyP1−y metamorphic buffer layers on InP substrates for mid-IR diode lasers
Keywords: B3 دیودهای لیزری; A3. Organometallic vapor phase epitaxy; A3. Quantum wells; B1. Antimonides; B1. Phosphides; B3. Laser diodes
Revised Erratum to “Key inventions in the history of nitride-based blue LED and LD” Isamu Akasaki [J. Crystal Growth 300 (2007) 2-10]
Keywords: B3 دیودهای لیزری; 71.55.Eq; 78.60.Fi; 81.05.Ea; 81.15.Gh; 85.30.Kk; 85.60.q; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting gallium compounds; B3. Laser diodes; B3. Light emitting diodes;
MBE growth of active regions for electrically pumped, cw-operating GaSb-based VCSELs
Keywords: B3 دیودهای لیزری; 42.55.Px; 73.63.HsA1. Computer simulation; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Antimonides; B2. Semiconducting quaternary alloys; B3. Infrared devices; B3. Laser diodes
Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6 μm
Keywords: B3 دیودهای لیزری; 42.55.Px; 78.55.Cr; 81.05.Ea; 81.07.St; 81.15.Hi; 81.40.EfA1. Defects; A3. Molecular beam epitaxy; B1. Dilute nitrides; B2. Semiconducting III–V materials; B3. Laser diodes
Novel UV devices on high-quality AlGaN using grooved underlying layer
Keywords: B3 دیودهای لیزری; 61.72.uj; 42.55.PxA3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Gallium compounds; B2. Semiconducting III–V materials; B3. Laser diodes; B3. Light-emitting diodes
Quality and thermal stability of thin InGaN films
Keywords: B3 دیودهای لیزری; 61.72.J−; 78.55.CR; 78.67.DeA1. Diffusion; A1. Thermal stability; A1. Point defects; A3. Quantum wells; B1. InGaN; B3. Laser diodes
HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice
Keywords: B3 دیودهای لیزری; 61.82.Fk; 68.65.Fg; 81.15.GhA1. Characterization; A3. Metal-organic chemical vapor deposition; A3. Quantum wells; B1. Nitrides; B2. Semiconducting aluminum compounds; B3. Laser diodes
GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3 μm) grown by MBE
Keywords: B3 دیودهای لیزری; 42.55.Px; 78.55.Cr; 81.05.Ea; 81.07.Ta; 85.35.BeA3. Molecular beam epitaxy; A3. Quantum wells; B1. Antimonides; B3. Laser diodes
Growth of InAs/InP-based quantum dots for 1.55 μm laser applications
Keywords: B3 دیودهای لیزری; 68.65.+g; 81.05.Ea; 81.15.Hi; 78.55.−mA1. Nanostructures; A3. Chemical beam epitaxy; B2. Semiconducting III–V materials; B3. Laser diodes
MOVPE growth of InGaAs/GaAsP-MQWs for high-power laser diodes studied by reflectance anisotropy spectroscopy
Keywords: B3 دیودهای لیزری; 42.55.Px; 61.72.Ff; 78.66.Fd; 81.05.Ea; 81.15.GhA1. Reflectance anisotropy spectroscopy (RAS/RDS); A3. Metalorganic vapour phase epitaxy; A3. Quantum wells; B1. GaAsP; B1. InGaAs; B3. Laser diodes
Characterization of GaInN/GaN layers for green emitting laser diodes
Keywords: B3 دیودهای لیزری; 68.65.Ac; 68.65.Fg; 78.55.Et; 81.15.Gh; 85.60.Jb; 42.55.PxA1. Characterization; A3. Metal organic vapor phase epitaxy; B1. Nitrides; B3. Laser diodes; B3. Light emitting diodes
Quantum dot lasers: From promise to high-performance devices
Keywords: B3 دیودهای لیزری; 42.55.Px; 78.66.Fd; 78.67.Hc; 72.25.−bA1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials; B3. Laser diodes