کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794255 | 1023693 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3 μm) grown by MBE
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3 μm) grown by MBE GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3 μm) grown by MBE](/preview/png/1794255.png)
چکیده انگلیسی
We report the growth conditions and operations of electrically pumped monolithic Sb-based type-I quantum-well vertical cavity surface emitting lasers (VCSELs) emitting above 2.2 μm. The structures were grown on (0 0 1)-GaSb substrates by molecular beam epitaxy (MBE) and are made of two N-type GaSb/AlAsSb Bragg reflectors, a GaInAsSb/AlGaAsSb multiquantum-well active region and an InAsSb/GaSb tunnel junction. Growth conditions have been optimized for each target wavelength. Laser emission in CW up to 293 K at 2.3 μm and in pulsed regime at 2.52 μm at room temperature (RT) is demonstrated. These are the longest wavelength achieved with electrically pumped VCSELs to date.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 7, 15 March 2009, Pages 1912–1916
Journal: Journal of Crystal Growth - Volume 311, Issue 7, 15 March 2009, Pages 1912–1916
نویسندگان
L. Cerutti, A. Ducanchez, G. Narcy, P. Grech, G. Boissier, A. Garnache, E. Tournié, F. Genty,