Keywords: A3 چاه های کوانتومی; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Arsenates; B2. Semiconducting III-V materials; B3. Infrared devices;
مقالات ISI A3 چاه های کوانتومی (ترجمه نشده)
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Keywords: A3 چاه های کوانتومی; A1. Characterization; A3. Quantum wells; B1. Nanomaterials; B2. Semiconducting III-V materials; B3. Solar cells;
Keywords: A3 چاه های کوانتومی; A1. Interfaces; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III–V materials; B3. Laser diodes
Structure optimization of 266â¯nm Al0.53GaN/Al0.75GaN SQW DUV-LD
Keywords: A3 چاه های کوانتومی; B2. Semiconducting aluminum compounds; B3. Laser diodes; B3. Heterojunction semiconductor devices; A3. Quantum wells;
Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing
Keywords: A3 چاه های کوانتومی; A3. Chemical beam epitaxy; B2. Semiconducting III-V materials; A3. Quantum wells; A1. Optical properties; A1. Rapid thermal annealing;
Ultraviolet emission from MgZnO films and ZnO/MgZnO single quantum wells grown by pulsed laser deposition
Keywords: A3 چاه های کوانتومی; A1. Characterization; A3. Laser epitaxy; A3. Quantum wells; B1. Alloys; B1. Oxides; B2. Semiconducting ternary compounds;
Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120â¯nm and 1180â¯nm
Keywords: A3 چاه های کوانتومی; A1. Defects; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Laser diodes;
Light emission enhancement from Ge quantum dots with phosphorous δ-doped neighboring confinement structures
Keywords: A3 چاه های کوانتومی; A1. Low dimensional structures; A3. Quantum wells; B2. Semiconducting germanium; B2. Semiconducting silicon compounds;
Interface roughness scattering in InGaAs/InAlAs double quantum wells grown on (100) and (411)A InP substrates at different growth temperatures
Keywords: A3 چاه های کوانتومی; A1. Interface Roughness Scattering; A3. (411)A; A3. Quantum Wells; A3. Gas-Source Molecular-Beam Epitaxy;
Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band
Keywords: A3 چاه های کوانتومی; A1. Carrier localization; A3. MOCVD; A3. Quantum wells; A3. SPSL; B1. Nitrides;
Up-converted photoluminescence in InAs/GaAs heterostructures
Keywords: A3 چاه های کوانتومی; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; A3. Quantum wells; A1. Optical properties; B3. Intermediate band solar cell;
An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structures
Keywords: A3 چاه های کوانتومی; A1. Defects; A1. Nucleation; A1. Substrates; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells;
Synthesis, structure, lattice energy and enthalpy of 2D hybrid perovskite [NH3(CH2)4NH3]CoCl4, compared to [NH3(CH2)nNH3]CoCl4, n=3-9
Keywords: A3 چاه های کوانتومی; A1. Crystal structure; A2. Growth from high temperature solutions; A2. Single crystal growth; A3. Quantum wells; B1. Perovskites; B1. Inorganic compound;
Indium incorporation into InGaN: The role of the adlayer
Keywords: A3 چاه های کوانتومی; A1. Surface processes; A3. Low press. metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III-V materials;
In-situ curvature monitoring and X-ray diffraction study of InGaAsP/InGaP quantum wells
Keywords: A3 چاه های کوانتومی; A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B2. Semiconducting III-V materials; B2. Semiconducting gallium arsenide; B2. Semiconducting indium gallium phosphide; B3. Solar cells;
InSb/InAs/InGa(Al)As/GaAs(0 0 1) metamorphic nanoheterostructures grown by MBE and emitting beyond 3 μm
Keywords: A3 چاه های کوانتومی; B2. Semiconducting III-V materials; B1. Antimonides; A3. Molecular beam epitaxy; A3. Quantum wells; B3. Infrared devices;
Sensitivity of heterointerfaces on emission wavelength of quantum cascade lasers
Keywords: A3 چاه های کوانتومی; A1. Interfaces; A1. Segregation; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Infrared devices;
Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells
Keywords: A3 چاه های کوانتومی; A1. Stresses; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III–V materials
MOVPE growth of laser structures for high-power applications at different ambient temperatures
Keywords: A3 چاه های کوانتومی; A1. Interfaces; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Laser diodes;
Controlling the compositional inhomogeneities in AlxGa1−xN/AlyGa1−yN MQWs grown by PA-MBE: Effect on luminescence properties
Keywords: A3 چاه های کوانتومی; A1. Characterization; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III–V materials
Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35Ã106Â cm2/VÂ s in AlGaAs/GaAs quantum wells grown by MBE
Keywords: A3 چاه های کوانتومی; A1. Electron mobility; A3. Molecular beam epitaxy (MBE); A3. Quantum wells; Gallium arsenide; Two dimensional electron gas (2DEG);
GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source
Keywords: A3 چاه های کوانتومی; A1. Crystal morphology; A1. Impurities; A1. Point defects; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nitrides
Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells
Keywords: A3 چاه های کوانتومی; A3. Quantum wells; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B3. Heterojunction semiconductor devices;
High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy
Keywords: A3 چاه های کوانتومی; A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Field effect transistors;
MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization
Keywords: A3 چاه های کوانتومی; A1. Characterization; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Bismuth compounds; B2. Semiconducting gallium compounds.;
Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer
Keywords: A3 چاه های کوانتومی; A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B1. Nitride; B2. Semiconductor III–V materials; B3. Light emitting diode
Sn-rich cubic phase nanocrystals in a SiGe/Si(001) quantum well
Keywords: A3 چاه های کوانتومی; A1. Precipitation; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nanomaterials;
Improved electron transport properties of InSb quantum well structure using stepped buffer layer for strain reduction
Keywords: A3 چاه های کوانتومی; A1. Interfaces; A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B2. Semiconducting indium compounds; B3. High electron mobility transistors;
Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells
Keywords: A3 چاه های کوانتومی; A1. Surface processes; A3. Low press. metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III–V materials
Low-temperature MOVPE using TEGa for suppressed layer undulation in InxGa1−xAs/GaAs1−yPy superlattice on vicinal substrates
Keywords: A3 چاه های کوانتومی; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Gallium compounds; B2. Semiconducting III–V materials; B3. Solar cells
Non-destructive mapping of doping and structural composition of MOVPE-grown high current density resonant tunnelling diodes through photoluminescence spectroscopy
Keywords: A3 چاه های کوانتومی; A1. Photoluminescence; A3. Metalorganic chemical vapour deposition; A3. Quantum wells; B1. Arsenides; B3. Resonant Tunnelling Diodes
Crystal quality of InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices
Keywords: A3 چاه های کوانتومی; A1. Low dimensional structures; A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials;
Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280Â nm
Keywords: A3 چاه های کوانتومی; A1. Defects; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. III-nitrides; B3. DUV devices;
Photoluminescence at up to 2.4 μm wavelengths from GaInAsBi/AlInAs quantum wells
Keywords: A3 چاه های کوانتومی; A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Quantum wells; B1. GaInAsBi
Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes
Keywords: A3 چاه های کوانتومی; A1. Interfaces; A2. Metalorganic chemical vapor deposition; A3. Quantum wells; B1. Nitrides; B2. Semiconducting indium compounds; B3. Laser diodes
Strained InGaAs/InAlAs quantum wells for complementary III-V transistors
Keywords: A3 چاه های کوانتومی; A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B2. Semiconducting In compounds; B3. Field effect transistors; B3. High electron mobility transistors;
Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates
Keywords: A3 چاه های کوانتومی; A1. Doping; A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B1. Nitrides; B3. Light emitting diodes;
Annealing effects on the composition and disorder of Ga(N,As,P) quantum wells on silicon substrates for laser application
Keywords: A3 چاه های کوانتومی; A1. Diffusion; A1. Optical spectroscopy; A1. TEM; A1. CMOS compatibility; A3. Quantum wells; B2. Semiconducting quaternary alloys;
The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method
Keywords: A3 چاه های کوانتومی; A1. Substrate; A1. Surface structure; A3. Metalorganic vapour phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III-V materials;
Modeling and process control of MOCVD growth of InAlGaAs MQW structures on InP
Keywords: A3 چاه های کوانتومی; A3. Metalorganic chemical vapor deposition; A3. Organometallic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Heterojunction semiconductor devices; B3. Laser diodes;
Optical properties of InAsSbN single quantum wells grown on InP substrates for 2-μm-wavelength region
Keywords: A3 چاه های کوانتومی; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nanomaterials; B2. Semiconducting III-V materials; B3. Laser diodes;
Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars
Keywords: A3 چاه های کوانتومی; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Quantum wells; A3. Superlattices; B2. Semiconducting gallium arsenide; B2. Semiconducting silicon;
Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region
Keywords: A3 چاه های کوانتومی; A3. Low press. Metalorganic vapor phase epitaxy; A3. Quantum wells; A3. Laser epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Enhanced emission efficiency of green InGaN/GaN multiple quantum wells by surface plasmon of Au nanoparticles
Keywords: A3 چاه های کوانتومی; A1. Nanostructures; A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III–V materials; B3. Light emitting diodes
Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE
Keywords: A3 چاه های کوانتومی; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III–V materials; B3. Infrared devices; B3. Solar cells
MOVPE growth of Al0.85Ga0.15As for high power laser diodes emitting at 808 nm
Keywords: A3 چاه های کوانتومی; A1. Interfaces; A3. Metallorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III–V materials; B3. Laser diodes
Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD
Keywords: A3 چاه های کوانتومی; A1. Segregation; A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B2. Semiconducting indium compound
Improved performance of semi-polar (11-22) GaN-based light-emitting diodes grown on SiNx interlayer
Keywords: A3 چاه های کوانتومی; A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B1. Nitrides; B3. Light emitting diodes
Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer
Keywords: A3 چاه های کوانتومی; A1. Dislocations; A3. Molecular beam epitaxy; A3. Quantum wells; A3. Strained superlattices; A3. Metamorphic buffer; B2. Semiconducting indium gallium arsenide; B2. Semiconducting indium aluminum arsenide; B3. High electron mobility transistors
Growth control of nonpolar and polar ZnO/MgxZn1−xOZnO/MgxZn1−xO quantum wells by pulsed-laser deposition
Keywords: A3 چاه های کوانتومی; A1. Reflection high energy electron diffraction; A1. Atomic force microscopy; A1. X-ray diffraction; A3. Physical vapor deposition processes; A3. Quantum wells; B1. Zinc oxide