کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148927 | 1524346 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing](/preview/png/8148927.png)
چکیده انگلیسی
The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs multiple quantum wells (MQWs) grown by chemical beam epitaxy (CBE) are studied by photoluminescence (PL) at 77â¯K. The results show that the optical quality of the MQWs improves significantly after RTA. With increasing RTA temperature, PL peak energy of the MQWs redshifts below 1023â¯K, while it blueshifts above 1023â¯K. Two competitive processes which occur simultaneously during RTA result in redshift at low temperature and blueshift at high temperature. It is also found that PL peak energy shift can be explained neither by nitrogen diffusion out of quantum wells nor by nitrogen reorganization inside quantum wells. PL peak energy shift can be quantitatively explained by a modified recombination coupling model in which redshift nonradiative recombination and blueshift nonradiative recombination coexist. The results obtained have significant implication on the growth and RTA of GaNAs material for high performance optoelectronic device application.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 483, 1 February 2018, Pages 190-194
Journal: Journal of Crystal Growth - Volume 483, 1 February 2018, Pages 190-194
نویسندگان
Yijun Sun, Zhiyuan Cheng, Qiang Zhou, Ying Sun, Jiabao Sun, Yanhua Liu, Meifang Wang, Zhen Cao, Zhi Ye, Mingsheng Xu, Yong Ding, Peng Chen, Michael Heuken, Takashi Egawa,