کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1789688 | 1524388 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35Ã106Â cm2/VÂ s in AlGaAs/GaAs quantum wells grown by MBE
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We provide evidence that gallium purity is the primary impediment to attainment of ultra-high mobility in a two-dimensional electron gas (2DEG) in AlGaAs/GaAs heterostructures grown by molecular beam epitaxy (MBE). The purity of gallium can be enhanced dramatically by in-situ high temperature outgassing within an operating MBE. Based on analysis of data from an initial growth campaign in a new MBE system and modifications employed for a 2nd growth campaign, we have produced 2DEGs with low temperature mobility μ in excess of 35Ã106 cm2/V s at density n=3.0Ã1011/cm2 and μ=18Ã106 cm2/V s at n=1.1Ã1011/cm2. Our 2nd campaign data indicate that gallium purity remains the factor currently limiting μ<40Ã106 cm2/V s. We describe strategies to overcome this limitation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 441, 1 May 2016, Pages 71-77
Journal: Journal of Crystal Growth - Volume 441, 1 May 2016, Pages 71-77
نویسندگان
Geoffrey C. Gardner, Saeed Fallahi, John D. Watson, Michael J. Manfra,