Keywords: گالسیوم آرسنید; Modulated photothermal infrared radiometry; Silicon; Gallium arsenide; Effective infrared absorption coefficient; Thermal diffusivity;
مقالات ISI گالسیوم آرسنید (ترجمه نشده)
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Gallium Arsenide nanowires for electrode application in solid oxide fuel cell grown using metal organic chemical vapor deposition
Keywords: گالسیوم آرسنید; Solid oxide fuel cell; MOCVD; Gallium Arsenide; Nanowire; Vapor-liquid-solid;
Keywords: گالسیوم آرسنید; Ag; silver; Ag2S; silver Sulfide; AIST; Japanese National Institute of Advanced Industrial Science and Technology; AM; air mass; a-Si; amorphous silicon; Au; gold; AZO; Al-doped ZnO; Bi2S3; bismuth(III) sulfide; CB; conduction band; CBD; chemical bath dep
Keywords: گالسیوم آرسنید; Lattice kinetic Monte Carlo modeling; Solid phase epitaxial regrowth; Metal organic chemical vapor deposition; Defect evolution; Silicon; Gallium arsenide;
Keywords: گالسیوم آرسنید; Gallium Arsenide; p-i-n photodiodes; X-ray spectroscopy; Visible and near infrared responsivity;
Keywords: گالسیوم آرسنید; Gallium Arsenide; P-i-n photodiodes; X-ray spectroscopy; Beta particle spectroscopy;
Keywords: گالسیوم آرسنید; Gallium arsenide; Molecular device; Nanoribbon; Transport property; Transmission pathways
Keywords: گالسیوم آرسنید; Composite varistor; Polyaniline; Polyethylene; Gallium arsenide; Sintering pressure;
Keywords: گالسیوم آرسنید; Defects; Density functional theory; Band gap; Electronic properties; Gallium arsenide; Modeling and simulation
Keywords: گالسیوم آرسنید; Indiun tin oxide; Gallium Arsenide; Schottky barrier; Indium Arsenide; Quantum dots; Solar cells
Keywords: گالسیوم آرسنید; Cellulosimicrobium funkei; Gallium arsenide; Semiconductor; Bioleaching; Electronic waste
Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry
Keywords: گالسیوم آرسنید; Nanoscale etching; GaAs; InP; Reaction mechanisms; Surface chemistry; III-V oxide; AFM; atomic force microscopy; ICP-MS; inductively coupled plasma mass spectrometry; XPS; x-ray photoemission spectrometry; GaAs; gallium arsenide; InP; indium phosphide; To
The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga2O3 films on GaAs substrate
Keywords: گالسیوم آرسنید; Pulsed laser deposition; Gallium oxide; Gallium arsenide; Europium; Luminescence;
ZnO/GaAs heterojunction solar cells fabricated by the ALD method
Keywords: گالسیوم آرسنید; ZnO/GaAs; AZO/GaAs; Zinc oxide; Gallium arsenide; ALD; Heterojunction; Solar cells;
Gallium arsenide (GaAs) leaching behavior and surface chemistry changes in response to pH and O2
Keywords: گالسیوم آرسنید; Gallium arsenide; Arsenic; Leaching; Dissolution; Corrosion;
Phase optimization study of orthorhombic structured SnS nanorods from CTAB assisted polyol synthesis for higher efficiency thin film solar cells
Keywords: گالسیوم آرسنید; TFSCs; thin film solar cells; CZTS; copper zinc tin sulphide; CIGS; copper indium gallium sulphide; GaAs; gallium arsenide; CdTe; cadmium telluride; NPs; nanoparticles; Rt; reaction time; CTAB; cetyltrimethylammonium bromide; CBD; chemical bath deposition
A comparative study on heat capacity, magnetization and magnetic susceptibility for a GaAs quantum dot with asymmetric confinement
Keywords: گالسیوم آرسنید; Thermal properties; Magnetic properties; Gallium arsenide; Quantum confinement;
Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding
Keywords: گالسیوم آرسنید; Characterization; Defects; Nucleation; Chemical beam epitaxy; Selective epitaxy; Gallium arsenide; Silicon;
Dielectric functions, chemical and atomic compositions of the near surface layers of implanted GaAs by In+ ions
Keywords: گالسیوم آرسنید; Native oxides; Ion implantation; Indium ions; Gallium arsenide; XPS method; RBS method;
GaAs detectors with an ultra-thin Schottky contact for spectrometry of charged particles
Keywords: گالسیوم آرسنید; Gallium arsenide; Chloride vapor phase epitaxy; Schottky contact; Nuclear detector; α-Particles; Energy resolution;
Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs
Keywords: گالسیوم آرسنید; Electron beam exposure; Laplace DLTS; Discrete breathers; Threshold energy; Gallium arsenide;
Effects of p-type doping and electric field on electronic band structure and optical properties of GaNAsBi/GaAs quantum well detectors operating at 1.55 μm
Keywords: گالسیوم آرسنید; GaNAsBi/GaAs; Gallium nitride; Gallium arsenide; Quantum wells; p-doping; Energy band structure; Quantum confined stark effect; Absorption coefficient;
Temperature effects on gallium arsenide 63Ni betavoltaic cell
Keywords: گالسیوم آرسنید; Gallium arsenide; Betavoltaic; Semiconductors;
Influence of the different strains' components on the uniaxial magnetic anisotropy parameters for a (Ga,Mn)As bulk system: A first-principles study
Keywords: گالسیوم آرسنید; Ab initio calculations; Dilute magnetic semiconductors; Gallium arsenide; Magnetic anisotropy; Density functional theory; Spintronics;
Measurement of a phonon resonance in a GaSe crystal using THz free induction decay
Keywords: گالسیوم آرسنید; terahertz spectroscopy; free-induction decay; gallium arsenide;
Thermal modeling, exergy analysis, performance of BIPV and BIPVT: A review
Keywords: گالسیوم آرسنید; CdTe; Cadmium Telluride; CIS; Copper Indium Gallium Selenide; GaAs; Gallium Arsenide; DC; Direct current; NZEB; Net-zero energy buildings; BIPV; Building-integrated photovoltaic; BAPV; Building applied photovoltaic; BIPVT; Building-integrated photovoltaic
Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment
Keywords: گالسیوم آرسنید; Surface treatment; III-V Semiconductors; Gallium arsenide; Heterostructure field effect transistors; Transistor characteristics; Trap state density;
In situ infrared spectroscopy study of the surface reactions during the atomic layer deposition of TiO2 on GaAs (100) surfaces
Keywords: گالسیوم آرسنید; Atomic layer deposition; Infrared spectroscopy; Interface cleaning; Dielectrics; Alkylamide precursors; Gallium arsenide;
DNA molecular ruler-modulated photoluminescence enhancement of gallium arsenide modified with plasmonic nanoparticles
Keywords: گالسیوم آرسنید; Gallium arsenide; Plasmonics; Photoluminescence; DNA; Gold nanoparticles;
On the electrical properties of distinct Eu3Â + emission centers in the heterojunction GaAs/SnO2
Keywords: گالسیوم آرسنید; Tin dioxide; Gallium arsenide; Heterojunction; Electrical properties; Photoluminescence;
Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35Ã106Â cm2/VÂ s in AlGaAs/GaAs quantum wells grown by MBE
Keywords: گالسیوم آرسنید; A1. Electron mobility; A3. Molecular beam epitaxy (MBE); A3. Quantum wells; Gallium arsenide; Two dimensional electron gas (2DEG);
Chemical composition of native oxides on noble gases implanted GaAs
Keywords: گالسیوم آرسنید; Native oxides; Ion implantation; Gallium arsenide; X-ray photoelectron spectroscopy; Rutherford back-scattering spectroscopy; Nuclear reaction;
The roles of the temperature on the structural and electronic properties of deep-level VAsVGa defects in gallium arsenide
Keywords: گالسیوم آرسنید; Gallium arsenide; VAsVGa defects; EL2; EL6; Deep-level defects; First-principles;
Drastic structure changes in pre-damaged GaAs crystals irradiated with swift heavy ions
Keywords: گالسیوم آرسنید; Swift heavy ions; Gallium arsenide; Electron pre-damaging; Defect formation;
Investigation on the effect of external mechanical stress on the DC characteristics of GaAs microwave devices
Keywords: گالسیوم آرسنید; Bending; Uniform in-plane stress; Microwave; Gallium Arsenide; Piezoelectric effect; Packaging; Reliability;
Thermodynamics of the pseudobinary GaAs1-xBix (0 â¤Â x â¤Â 1) alloys studied by different exchange-correlation functionals, special quasi-random structures and Monte Carlo simulations
Keywords: گالسیوم آرسنید; Gallium arsenide; Bismide; Gibbs free energy; Immiscibility; Spinodal decomposition; Surface;
Quasi-phase matched broadband difference frequency generation in the mid-infrared region using total internal reflection in a tapered gallium arsenide (GaAs) slab
Keywords: گالسیوم آرسنید; Gallium arsenide; Difference frequency generation; Total internal reflection quasi-phase matching; Goos-Hänchen shift; Optical beam walk-off
13.7% Efficiency graphene-gallium arsenide Schottky junction solar cells with a P3HT hole transport layer
Keywords: گالسیوم آرسنید; Graphene; Gallium arsenide; P3HT; TFSA; Antireflection;
Si, GaAs, and InP as cathode materials for photon-enhanced thermionic emission solar cells
Keywords: گالسیوم آرسنید; Solar energy; Photon-enhanced thermionic emission; Device model; Silicon; Gallium arsenide; Indium phosphide
Electrochemical formation of GaAs honeycomb structure using a fluoride-containing (NH4)2SO4 solution
Keywords: گالسیوم آرسنید; Gallium arsenide; Anodization; Self-organization; Surface modification; Photoluminescence;
Enhanced terahertz emission from GaAs substrates deposited with aluminum nitride films caused by high interface electric fields
Keywords: گالسیوم آرسنید; Surface modification; Gallium Arsenide; Terahertz;
Bismuth-containing c(4Â ÃÂ 4) surface structure of the GaAs(1Â 0Â 0) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations
Keywords: گالسیوم آرسنید; Core-level shift; Synchrotron-radiation spectroscopy; Ab initio; Surface reconstruction; Gallium arsenide; Bismuth;
13-bit GaAs serial-to-parallel converter with compact layout for core-chip applications
Keywords: گالسیوم آرسنید; Serial-to-parallel converter; Gallium arsenide; Core-chip; Smart antenna; X-band
The effect of Al2O3 passivation layer in pulsed-laser-deposited ZrO2 films on n-GaAs substrate as a function of post-annealing temperature
Keywords: گالسیوم آرسنید; Pulsed laser deposition; Gallium arsenide; Passivation layer; Zirconium oxide
Chromium compensated gallium arsenide detectors for X-ray and γ-ray spectroscopic imaging
Keywords: گالسیوم آرسنید; Gallium arsenide; Radiation; X-ray detector; Imaging; Pixel detector; Compensation;
Structural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs
Keywords: گالسیوم آرسنید; Hafnia; Gallium arsenide; Atomic layer deposition; Dielectric properties; High dielectric constant materials
Effect of substrate temperature on optical properties and strain distribution of ZnTe epilayer on (100) GaAs substrates
Keywords: گالسیوم آرسنید; Zinc telluride; Gallium arsenide; Photoluminescence; Strain; Metal-organic chemical vapor deposition;
Interface formation of nanostructured heterojunction SnO2:Eu/GaAs and electronic transport properties
Keywords: گالسیوم آرسنید; Tin dioxide; Gallium arsenide; Heterojunction; Interface; Electrical conductivity;
Magnetic and structural properties of Ni nanocaps deposited onto self assembled nanosphere array
Keywords: گالسیوم آرسنید; Nickel; Thin films; Magnetic properties; Silicon; Polysterene; Patterning; Gallium arsenide;
Temperature dependent electrophysical characteristics of GaAs-polymer composite varistors
Keywords: گالسیوم آرسنید; Composite varistor; Polyaniline; Polyethylene; Gallium arsenide;