کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7840653 | 1505868 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga2O3 films on GaAs substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have fabricated the europium (Eu) doped Ga2O3 thin films on GaAs substrate by using pulsed laser deposition. The impact of Eu contents on structure, surface morphology, and optical properties are systematically investigated. We demonstrate that the Eu contents in Ga2O3 films can be controlled by adjusting the Eu contents in the targets. Moreover, all the films exhibited monoclinic Ga2O3 structure and smooth surface. We also clearly observe intense red emissions at 611Â nm for the Eu doped Ga2O3 films. It is believed that this work paves the way for the development of GaAs-based red electroluminescence devices by using wide bandgap Ga2O3 as the host materials for Eu3+ ions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 194, February 2018, Pages 374-378
Journal: Journal of Luminescence - Volume 194, February 2018, Pages 374-378
نویسندگان
Zhengwei Chen, Kazuo Nishihagi, Xu Wang, Congyu Hu, Makoto Arita, Katsuhiko Saito, Tooru Tanaka, Qixin Guo,