XPS and IPE analysis of HfO2 band alignment with high-mobility semiconductors
Keywords: گالسیوم آرسنید; Hafnium oxide; Band alignment; Germanium; Gallium arsenide; XPS; IPE
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Large scale atomic ordering on uncovered GaAs(0Â 0Â 1) after InAs monolayer capping: Atomic structure of the (12Â ÃÂ 6) reconstruction
Keywords: گالسیوم آرسنید; Molecular beam epitaxy; Scanning tunneling microscopy; Surface reconstruction; Surface structure; Gallium arsenide; Indium arsenide;
Passivation of GaAs surface by atomic-layer-deposited titanium nitride
Keywords: گالسیوم آرسنید; 81.15.Gh; 78.55.Cr; 78.55.-m; 81.65.Rv; 78.55.Qr; Atomic layer deposition; Gallium arsenide; Photoluminescence; Surface passivation; Titanium nitride;
Electric field control photo-induced Hall currents in semiconductors
Keywords: گالسیوم آرسنید; Spintronics; Spin polarization; Hall effect; Gallium arsenide
Structural properties of GaAs surfaces nitrided in hydrazine-sulfide solutions
Keywords: گالسیوم آرسنید; 68.55.Jk; 81.65.Rv; 82.45.Mp; 82.80.Pv; Gallium arsenide; Chemical nitridation; Nitride monolayer; Surface morphology; Scanning tunneling microscopy; Auger electron spectroscopy;
Surface reactions in atomic layer deposition of HfO2, ZrO2 and Al2O3 on hydroxylated and sulfur-passivated GaAs(1Â 0Â 0) surfaces: A comparative study by density functional theory
Keywords: گالسیوم آرسنید; Density functional theory; Dielectrics; Gallium arsenide; Atomic layer deposition;
Passivation of defect states in Si-based and GaAs structures
Keywords: گالسیوم آرسنید; 71.20.Nr; 71.20.Mq; 73.20.At; 73.40.Ty; 73.30.+y; Silicon; Gallium arsenide; Ultrathin dielectrics; Double layer; Interface roughness;
Quantitative analysis of doping profile on beveled p-type GaAs structures by micro-Raman spectroscopy
Keywords: گالسیوم آرسنید; 78.30.Fs; 68.55.Ln; 73.20.MfDoping profile; Semiconductors; Gallium arsenide; Bevel; Raman spectroscopy
Early stages of interface formation of C60 on GaAs(1 0 0)
Keywords: گالسیوم آرسنید; Fullerene; Gallium arsenide; Semiconductor surfaces and interfaces;
Dielectric properties and model of hopping conductivity of GaAs irradiated by H+ ions
Keywords: گالسیوم آرسنید; Ion implantation; Hopping conductivity; Gallium arsenide
Magnetoresistance of magnetite thin films grown by pulsed laser deposition on GaAs(1 0 0) and Al2O3(0 0 0 1)
Keywords: گالسیوم آرسنید; 81.15.Fg; 76.80.+y; 75.50.Gg; 75.70.Ak; Fe3O4 thin films; Gallium arsenide; Sapphire; PLD; Magnetoresistance;
Thermoelastic stresses in multilayered beams
Keywords: گالسیوم آرسنید; Gallium arsenide; Multilayers; Thermoelasticity; Stress; Modeling
Nucleation and growth mechanism of GaAs epitaxial growth
Keywords: گالسیوم آرسنید; 68.43.Jk; 68.43.Fg; 81.10.AjGrowth mechanism; Surface diffusion; Gallium Arsenide; Surface structure
Growth and defects of GaAs and InGaAs films on porous GaAs substrates
Keywords: گالسیوم آرسنید; Porous substrates; Gallium arsenide; Epitaxy; Electrical properties and measurements
Maskless proton beam writing in gallium arsenide
Keywords: گالسیوم آرسنید; 81.16.Nd; 85.40.HpProton beam writing; Gallium arsenide
Morphology, Raman scattering and photoluminescence of porous GaAs layers
Keywords: گالسیوم آرسنید; Gallium arsenide; Electrochemical etching; Raman scattering; Photoluminescence; Quantum confinement; Solar cell
Shape cycle of Ga clusters on GaAs during coalescence growth
Keywords: گالسیوم آرسنید; Surface thermodynamics (including phase transitions); Surface structure, morphology, roughness, and topography; Gallium arsenide; Clusters; Semiconducting surfaces;
Boron and indium substitution in GaAs(0 0 1) surfaces: Density-functional supercell calculations of the surface stability
Keywords: گالسیوم آرسنید; Chemisorption; Chemical vapor deposition; Growth; Density-functional calculations; Surface energy; Boron arsenide; Gallium arsenide; Indium arsenide;
Microstructure and electrical characteristics of Ni–Cr thin films
Keywords: گالسیوم آرسنید; Ni–Cr; Gallium arsenide; Temperature coefficient of resistance; TEM
Detection and study of photo-generated spin currents in nonmagnetic semiconductor materials
Keywords: گالسیوم آرسنید; Photo-excitation; Spin polarization; Spin current; Extraordinary Hall effect; Gallium arsenide;
Mapping the surface reconstructions of MnSb(0 0 0 1) and (11¯01)
Keywords: گالسیوم آرسنید; Reflection high energy electron diffraction (RHEED); Scanning tunnelling microscopy; Gallium arsenide; Single crystal epitaxy; Magnetic films; Metal-semiconductor magnetic hetero-structures; Single crystal surfaces;
Surface reactions of 2-iodopropane on GaAs(1 0 0)
Keywords: گالسیوم آرسنید; 2-Iodopropane; Coupling reactions; Catalysis; Disproportionation reactions; Gallium arsenide; Thermal desorption; X-ray photoelectron spectroscopy;
Ge/GaAs heterostructure matrix detector
Keywords: گالسیوم آرسنید; 29.40.−n; 07.85.Fv; 29.40.Wk; 42.79.PwGermanium detector; Gallium arsenide; GaAs; MOVPE; Heterostructure; Pixelated; Segmented; Matrix
Synchrotron X-ray topography study of defects in epitaxial GaAs on high-quality Ge
Keywords: گالسیوم آرسنید; 79.60.Jv; 81.05.Ea; 61.72.Ff; 81.10.BkCrystal defects; X-ray topography; Heterostructures; Germanium; Gallium arsenide; X-ray detectors
Electron surface states in short-period superlattices: (GaAs)2/(AlAs)2(1 0 0)-c(4 Ã 4)
Keywords: گالسیوم آرسنید; Molecular beam epitaxy; Synchrotron radiation; Photoelectron spectroscopy; Semiconductor superlattices; Surface states; Gallium arsenide;
Monte Carlo simulations of δδ-doping placement in sub-100 nm implant free InGaAs MOSFETs
Keywords: گالسیوم آرسنید; Monte Carlo models; Gallium arsenide; Indium arsenide; Heterostructures; Metal-oxide-semiconductor structures
The effect of hydrogen as an additive in reactive ion etching of GaAs for obtaining polished surface
Keywords: گالسیوم آرسنید; Reactive ion etching; Gallium arsenide; Hydrogen; Surface roughness;
Direct observation of magnetization reversal of epitaxial MnAs films
Keywords: گالسیوم آرسنید; Alloy; Gallium arsenide; Magnetic measurements; Single crystal surfaces; Magnetic films; Magnetic surface; Manganese arsenide; Magnetic force microscopy; Magneto-optical Kerr effect;
Solid-state gallium NMR characterization of cubic gallium nitride prepared by the reaction of gallium arsenide with ammonia
Keywords: گالسیوم آرسنید; 71Ga MAS NMR; c-Gallium nitride; c-GaN; Gallium arsenide
Charge transient spectroscopy measurements of GaAs metal-insulator-semiconductor structures
Keywords: گالسیوم آرسنید; 73.20.At; 73.40.Qv; Gallium arsenide; Metal-insulator-semiconductor structure; Charge transient spectroscopy; Electrical properties and measurements;
Chemistry and formation process of Ga(Al)As oxide during local anodic oxidation nanolithography
Keywords: گالسیوم آرسنید; Photoelectron spectroscopy; Desorption induced by photon stimulation; Nanopatterning; Oxidation; Gallium arsenide;
Micro-Raman spectroscopy of disordered and ordered sulfur phases on a passivated GaAs surface
Keywords: گالسیوم آرسنید; 78.30.âj; 81.65.âb; 63.22.+m; 71.55.Jv; Gallium arsenide; Sulfur passivation; Raman spectroscopy; Surface morphology; (NH4)2Sx; S2Cl2;
Structural and magnetic properties of Mn-doped GaAs(1â1â0) surface
Keywords: گالسیوم آرسنید; Gallium arsenide; Manganese; Magnetic semiconductors; Doping effects;
Gallium oxide (Ga2 O3) on gallium arsenide—A low defect, high-K system for future devices
Keywords: گالسیوم آرسنید; DX centres; Electron conduction; Gallium arsenide; Gallium oxide; Metal–oxide–semiconductor structures; Work function
High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon
Keywords: گالسیوم آرسنید; Metal-oxide-semiconductor structures; Oxidation; Surface and interface states; Gallium arsenide; Indium arsenide
Room temperature synthesized GaAs quantum dot embedded in SiO2 composite film
Keywords: گالسیوم آرسنید; Gallium arsenide; Quantum dots; Sputtering; Photoluminescence; Non-linear optical properties
Structural properties of Bi-terminated GaAs(0 0 1) surface
Keywords: گالسیوم آرسنید; Synchrotron radiation photoelectron spectroscopy; Scanning tunneling microscopy; Surface reconstruction; Gallium arsenide; Bismuth; Single crystal surfaces;
Preparation, characterization and nonlinear optical properties of colloidal gallium arsenide nanocrystals
Keywords: گالسیوم آرسنید; gallium arsenide; nanocrystals; nonlinear optics; ball milling technique;
Composition and structure of chemically prepared GaAs(1 1 1)A and (1 1 1)B surfaces
Keywords: گالسیوم آرسنید; Gallium arsenide; Polar crystal surfaces; Chemical passivation; Low energy electron diffraction; Photoelectron spectroscopy;
The effects of optical pump parameters on THz temporal waveforms from large-aperture photoconductive antenna
Keywords: گالسیوم آرسنید; 78.47.+P; 42.65.Re; 72.20.Jv; THz radiation; Gallium arsenide; Monte carlo method; Large-aperture antenna;
Determination of the doping concentration profile in Si δ-doped GaAs layers using micro-Raman spectroscopy of bevelled structures
Keywords: گالسیوم آرسنید; 78.30.Fs; 65.55.Ln; 73.20.MfMicro-Raman spectroscopy; Gallium arsenide; Doping; Bevelled structures
Liquid phase electro epitaxy growth kinetics of GaAs—A three-dimensional numerical simulation study
Keywords: گالسیوم آرسنید; Numerical simulation; Diffusion; Electromigration; Liquid phase electro epitaxy; Gallium arsenide
Magnetic anisotropy of Fe/GaAs(0 0 1) ultrathin films investigated by in situ ferromagnetic resonance
Keywords: گالسیوم آرسنید; Ferromagnetic resonance; Magnetic monolayers; Gallium arsenide; Magnetic anisotropy
Insulator-metal phase transitions of alkali atoms on GaAs(0 0 1)
Keywords: گالسیوم آرسنید; Synchrotron radiation photoelectron spectroscopy; Adsorption; Phase transition; Surface electronic phenomena; Surface structure and morphology; Alkali metals; Gallium arsenide; Metallic surfaces;
On the design of GaAs (hhl) resonant cantilevers: Study of piezoelectric excitation, of piezoresistive sensing and of micromachined structure
Keywords: گالسیوم آرسنید; Micro-resonator; Piezoresistive sensing; Micromachining; Gallium arsenide
Nonideality of Au/Si and Au/GaAs Schottky barriers due to process-induced defects
Keywords: گالسیوم آرسنید; 73.20.âr; 73.30.+y; Schottky barrier; Silicon; Gallium arsenide; Defect; Potential distribution;
Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometry
Keywords: گالسیوم آرسنید; 81.05.Ea; 81.10.Fq; 61.72.Ff; 44.05.+e; 81.40Jj; 61.50.Nw; Dislocation cells; Stress computing; Stoichiometry; Melt growth; Gallium arsenide;
Fourier transform infrared analysis of long-range surface polaritons excited by the end-fire method
Keywords: گالسیوم آرسنید; Surface plasmons; FTIR spectroscopy; Gallium arsenide; Gold;
Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering
Keywords: گالسیوم آرسنید; 61.10.Ht; 61.10.Nz; 61.43.Dq; 61.72.Vv; 78.40.Fy; 78.66.âw; EXAFS; Gallium arsenide; GaAs; Sputtering; Hydrogenation;
Ni/Pd/Au ohmic contact for p-GaAs and its application in red RCLED
Keywords: گالسیوم آرسنید; Gallium arsenide; Nickel; Metal-semiconductor-metal structures; Light emitting diodes;