کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5369430 | 1388433 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Passivation of GaAs surface by atomic-layer-deposited titanium nitride
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Passivation of GaAs surface by atomic-layer-deposited titanium nitride Passivation of GaAs surface by atomic-layer-deposited titanium nitride](/preview/png/5369430.png)
چکیده انگلیسی
The suitability of titanium nitride (TiN) for GaAs surface passivation and protection is investigated. A 2-6-nm thick TiN passivation layer is deposited by atomic layer deposition (ALD) at 275 ° C on top of InGaAs/GaAs near surface quantum well (NSQW) structures to study the surface passivation. X-ray reflectivity measurements are used to determine the physical properties of the passivation layer. TiN passivation does not affect the surface morphology of the samples, but increases significantly the photoluminescence intensity and carrier lifetime of the NSQWs, and also provides long-term protection of the sample surface. This study shows that ALD TiN coating is a promising low-temperature method for ex situ GaAs surface passivation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 17, 30 June 2008, Pages 5385-5389
Journal: Applied Surface Science - Volume 254, Issue 17, 30 June 2008, Pages 5385-5389
نویسندگان
M. Bosund, A. Aierken, J. Tiilikainen, T. Hakkarainen, H. Lipsanen,