Keywords: 73.63.Bd; 61.46.Km; 81.05.ug; 81.15.Gh; 68.55.A; Nanocrystalline diamond; Phosgene; Surface conductivity; Gas sensor; SEM;
مقالات ISI (ترجمه نشده)
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Keywords: 81.15.Gh; 78.20.âe; 78.55.âm; 68.37.Lp; Nano-crystalline silicon thin film; Hydrogen diluted SiH4 plasma; ICP-CVD; Photoluminescence; Quantum confinement effect;
Recent progress in ICF target fabrication at RCLF
Keywords: Capsule fabrication; Target characterization and assembly; Microencapsulation technique; Depolymerizable mandrel technique; White-light interferometry; 42.25.Hz; 64.70.pv; 68.05.Gh; 68.55.Ln; 81.15.Gh;
Atomic layer deposited ZnO films implanted with Yb: The influence of Yb location on optical and electrical properties
Keywords: 61.72.Vv; 61.85. + p; 78.55.Et; 78.66.Hf; 81.15.Gh; Zinc oxide; Ion implantation; Rare-earth; Ytterbium; Rutherford backscattering; Photoluminescence;
RF plasma enhanced MOCVD of yttria stabilized zirconia thin films using octanedionate precursors and their characterization
Keywords: 81.15.Gh; 68.55.âa; 52.77.âj; 79.60.âi; 52.80.Pi; 61.05.cj; YSZ; RF plasma; MOCVD; Ellipsometry; EXAFS; XANES;
Application of soft X-ray reflectometry for analysis of underlayer influence on structure of atomic-layer deposited SrTixOy films
Keywords: 61.05.cm; 81.15.Gh; 68.35.Ct; 68.35.Fx; 68.55.aj; Atomic concentration profiles; Soft X-ray reflectometry; Strontium titanate; Thin films; Interface; Underlayer material;
Structural, morphological and optical properties of Cd doped ZnO film grown on a- and r-plane sapphire substrate by MOCVD
Keywords: 81.05.Dz; 81.15.Gh; 61.05.cf; 68.37.Hk; Cd doped ZnO films; Metal organic chemical vapor deposition; High resolution X-ray diffraction; Atomic force microscopy; Scanning electron microscopy; Photoluminescence;
Electronic properties of a single heterojunction in InSb/InAs quantum dot system
Keywords: 68.37.Ps; 81.07.Ta; 81.15.Lm; 81.15.Gh; 81.16.Dn; LPE; Quantum dots; Heterostructures; III-V semiconductors; AFM; I-V characteristics;
TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface
Keywords: 68.37.Lp; 81.07.Ta; 81.15.Lm; 81.15.Gh; 81.16.Dn; Low dimensional structures; Transmission electron microscopy; Liquid phase epitaxy; Antimonides; InAs;
Structure, morphology and electrical properties of Mg2Si layers deposited by pack cementation
Keywords: 72.15.Jf; 81.15.Gh; 61.05.cp; 68.37.Hk; 07.57.Ty; 68.60.Dv; Thermoelectric materials; Chemical vapor deposition; XRD; SEM; FTIR; Thermal stability;
RF plasma MOCVD of Y2O3 thin films: Effect of RF self-bias on the substrates during deposition
Keywords: 52.77.âj; 81.15.Gh; 61.10.âi; 79.60.âi; 68.55.âa; 52.80.Pi; Y2O3; MOCVD; XPS; RF plasma;
Gd and Sm on clean semiconductor surfaces-Resonant photoemission studies
Keywords: 82.80.Pv; 81.15.Gh; 73.22.âf; Electronic structure; Resonant photoemission spectroscopy; Diluted magnetic semiconductors;
Field emission from ZnO whiskers under intervalley electron redistribution
Keywords: 85.45.âw; 85.45.Bz; 81.15.Gh; 71.20.Nr; 72.20.Ht; ZnO; Field emission; Electron transfer effect; Spectroscopy;
Growth and characterization of periodically polarity-inverted ZnO structures on sapphire substrates
Keywords: 81.05.Ea; 81.15.Gh; 78.55.CrA. Semiconductor; A. Thin films; B. Epitaxial growth; C. Atomic force microscopy
High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy
Keywords: Metalorganic vapor phase epitaxy; InAs; High resolution X-ray diffraction81.05.Ea; 81.15.Gh; 61.05.Cp
Classification of stacking faults and dislocations observed in nonpolar a-plane GaN epilayers using transmission electron microscopy
Keywords: 61.72.Ff; 68.37.Lp; 81.05.Ea; 81.15.Gh; Defects; Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials;
Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy
Keywords: 68.55.Aâ; 68.55.âa; 68.55.Jâ; 61.05.cp; 81.15.Gh; 81.05.Ea; Nucleation; X-ray diffraction; High temperature hydride vapor phase epitaxy; HT-HVPE; Nitrides; AlN; Semiconducting aluminum compounds;
Effects of hydrogen on photoluminescence properties of a-SiNx:H films prepared by VHF-PECVD
Keywords: Photoluminescence; Silicon nitride; Hydrogen; Chemical vapor deposition; 78.55.âm; 68.55aj; 67.80.fh; 68.55.Ln; 81.15.Gh;
Study of GaP single crystal layers grown on GaN by MOCVD
Keywords: 81.05.Ea; 81.15.Gh; 78.55.Cr; 61.72.Vv; 73.61.EyA. Semiconductors; A. Thin films; B. Epitaxial growth; C. Atomic force microscopy; C. X-ray diffraction
Influence of annealing on the structural and optical properties of ZnO films grown by MOCVD
Keywords: 78.55.Et; 81.15.Gh; 71.55.Gs; Semiconductors; ZnO film; Optical properties; Luminescence;
Growth, modulation and photoresponse characteristics of vertically aligned ZnO nanowires
Keywords: 81.05.Dz; 81.07.âb; 81.15.Gh; 78.67.ân; 85.60.Gz; ZnO nanowires; Metal organic chemical vapor deposition; Thin film; Etching; Microcavity; Photoresponse;
Growth and optical properties of ZnO nanorods prepared through hydrothermal growth followed by chemical vapor deposition
Keywords: 81.10.Dn; 81.15.Gh; 78.66.HfZinc oxide; Nanorod; Optical property; Seed layer
Enhancement of photoluminescence intensity from Si nanodots using Al2O3 surface passivation layer grown by atomic layer deposition
Keywords: 78.55.Ap; 78.67.Bf; 81.05.Cy; 81.07.Bc; 81.10.Bk; 81.15.Gh; 81.16.Dn; Si nanodot; Atomic layer deposition; Surface passivation layer; Photoluminescence; Aluminum oxide (Al2O3);
Variation of N acceptor energy induced by Al-N codoping in ZnO films
Keywords: 71.55.Gs; 61.72.Vv; 78.55.Et; 81.15.Gh; 81.70.Fy; Semiconductors; ZnO film; Optical properties; Luminescence;
Structural and optical characterization of single-phase γ-In2Se3 films with room-temperature photoluminescence
Keywords: 81.05.Hd; 81.15.Gh; 78.55.Hx; InSe; MOCVD; Photoluminescence;
Fabrication of diamond nanorods for gas sensing applications
Keywords: 73.63.Bd; 61.46.Km; 81.05.ug; 81.15.Gh; 68.55.A; Nanocrystalline diamond; Diamond nanorods; Surface conductivity; Gas sensor; SEM;
Dependence of Curie temperature on surface strain in InMnAs epitaxial structures
Keywords: 75.75.Cd; 78.67.Hc; 81.05.Ea; 81.15.Gh; Magnetic semiconductors; Quantum dots; Curie temperature; Strain;
Effect of thin aluminum interlayer on growth and microstructure of carbon nanotubes
Keywords: 81.15.Gh; 61.48.De; 61.46.Fg; 68.37.HkInterlayer; Carbon nanotubes (CNT); Chemical vapor deposition; Catalyst
Synthesis and optical properties of N-In codoped ZnO nanobelts
Keywords: 78.67.Lt; 78.30.Fs; 81.07.Vb; 81.15.Gh; ZnO nanobelts; Raman; Photoluminescence;
Enhanced light output of InGaN LEDs with a roughened p-GaN surface using different TMGa flow rates in p-AlGaN layer
Keywords: 77.55.Px; 78.55.Cr; 81.15.Gh; GaN; Light-emitting diodes (LEDs); Light extraction efficiency; Surface roughness;
Study of the morphological evolution of ZnO nanostructures on various sapphire substrates
Keywords: 81.05.Dz; 81.07.âb; 81.15.Gh; 78.67.ân; ZnO; Nanostructures; Metal organic chemical vapor deposition; Morphological and optical properties;
Characterization of crystal lattice constant and dislocation density of crack-free GaN films grown on Si(1Â 1Â 1)
Keywords: 87.85.Va; 81.05.Ea; 81.15.Gh; 78.35.+c; 61.05.Câ; Metalorganic chemical vapor deposition; Semiconducting III-V materials; AFM; X-ray diffraction; Defects;
Influence of post-annealing on the structure and optical properties of ferromagnetic Zn1âxMnxO film prepared by PECVD technique
Keywords: 75.50.Pp; 81.15.Gh; 78.55.âm; Magnetic semiconductor; Plasma-enhanced CVD; Photoluminescence;
Amorphous-like nanocrystalline γ-Al2O3 films prepared by MOCVD
Keywords: 81.15.Gh; 81.05.Je; 68.55.jmMOCVD; Alumina; Coating; Microstructure
Effects of N2 addition on nanocrystalline diamond films by HFCVD in Ar/CH4 gas mixture
Keywords: 81.15.Gh; 68.55; 68.37; 81.07Hot filament CVD; Nanocrystalline; Diamond films; Electron microscopy
Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(1Â 1Â 0) and other high-index surfaces
Keywords: 61.05.cp; 81.05.Ea; 81.15.Gh; A1. Characterization; A3. Metalorganic vapor-phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Characteristic enhancement of the blue LED chip by the growth and fabrication on patterned sapphire (0 0 0 1) substrate
Keywords: 85.60.Jb; 81.15.Gh; 81.65.Cf; 78. 6.Fi.A3. MOCVD; B1. GaN; B1. Patterned sapphire substrate; B3. Light-emitting diodes
Gas sensing properties of nanocrystalline diamond films
Keywords: 73.63.Bd; 81.05.Uw; 81.15.Gh; 68.55.ANanocrystalline diamond; Surface conductivity; Gas sensor; SEM; AFM
Efficient field emission from coiled carbon nano/microfiber on copper substrate by dc-PECVD
Keywords: 81.15.Gh; 79.70.+q; Carbon coil; Chemical vapor deposition; Field emission;
Silicon carbide film deposition at low temperatures using monomethylsilane gas
Keywords: 81.15.Gh; 71.20.Nr; 81.15.KkSilicon carbide; Monomethylsilane; Chemical vapor deposition; Low temperature
Revised Erratum to “Key inventions in the history of nitride-based blue LED and LD” Isamu Akasaki [J. Crystal Growth 300 (2007) 2-10]
Keywords: 71.55.Eq; 78.60.Fi; 81.05.Ea; 81.15.Gh; 85.30.Kk; 85.60.q; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting gallium compounds; B3. Laser diodes; B3. Light emitting diodes;
Thermal annealing dependence of some optical properties of plasma-modified porous silicon
Keywords: 78.55.Mb; 81.15.Gh; 81.70.Fy; 82.80.Gk; Porous silicon; Hydrocarbon layer; Photoluminescence; Reflectance;
A computational fluid dynamics model for co-deposition of silica and germania in the MCVD process
Keywords: 81.15.Gh; 42.81.Bm; 47.54.JkChemical vapor deposition; Germania; Silica
Towards a polariton-based light emitter based on non-polar GaN quantum wells
Keywords: 71.35.-y; 71.36.+c; 81.15.Gh; 81.05.EaA. Quantum wells; A. Semiconductors; B. Epitaxy; D. Optical properties
Broad band photoluminescence studies of diamond layers grown by hot-filament CVD
Keywords: 81.15.Gh; 71.55.Cn; 78.55.Ap; 78.30.AmLuminescence; Thin layers; HF CVD diamond layers; Raman spectra
Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications
Keywords: 81.15.Gh; 68.55.−a; N61.05.Cp; 68.37.Ps; 68.37.HkA1. X-ray diffraction; A1. Characterization; A3. Chemical vapor deposition processes; B1. Silicon Carbide; B3. MEMS devices
Synthesis and characterization of well-aligned Zn1−xMgxO nanorods and film by metal organic chemical vapor deposition
Keywords: 68.55.Nq; 81.05.Dz; 81.15.Gh; 87.64.JeA1. Nanostructures; A3. Metalorganic chemical vapor deposition; B1. Zinc compounds; B2. Semiconducting II–VI materials
Properties of the acrylic acid polymers obtained by atmospheric pressure plasma polymerization
Keywords: 52.40.Hf; 52.70.Kz; 81.05.Lg; 81.15.Gh; 82.35.PqPlasma polymerization; Atmospheric pressure discharge; Acrylic acid
Fabrication and field emission properties of boron nanowire bundles
Keywords: 81.05.Cy; 81.15.Gh; 79.70.+qBNBs; Chemical vapor deposition; FE
Impact of chlorine dissociation for modified chemical vapor deposition
Keywords: 81.15.Gh; 42.81.Bm; 47.54.JkChemical vapor deposition; Silica optical fiber; Chlorine dissociation; CFD modeling