Influence of annealing on the structural and optical properties of ZnO films grown by MOCVD

The properties of ZnO films grown on Si (1 1 1) substrates by Metal-Organic Chemical Vapor Deposition technique using diethylzinc and H2O as reactant gases are reported. The primary focus is on understanding the origin of deep-level luminescence. As increasing the annealing temperature, a visible emission is observed both in samples annealing in oxygen atmosphere and nitrogen atmosphere. In addition, this broad defect emission becomes obviously asymmetric when the annealing temperature was increased to 1000 °C in oxygen atmosphere. Theoretical investigations have reported that the formation enthalpy of defects is varied under different conditions. With these results, it is suggested that the visible emission in ZnO films annealed in oxygen atmosphere is related to zinc vacancy and oxygen interstitial defects. While, the green emission in ZnO films which were annealed in nitrogen atmosphere is attributed to oxygen vacancy defects.