کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5354331 1503610 2015 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
RF plasma enhanced MOCVD of yttria stabilized zirconia thin films using octanedionate precursors and their characterization
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
RF plasma enhanced MOCVD of yttria stabilized zirconia thin films using octanedionate precursors and their characterization
چکیده انگلیسی
Yttria stabilized zirconia thin films have been deposited by RF plasma enhanced MOCVD technique on silicon substrates at substrate temperature of 400 °C. Plasma of precursor vapors of (2,7,7-trimethyl-3,5-octanedionate) yttrium (known as Y(tod)3), (2,7,7-trimethyl-3,5-octanedionate) zirconium (known as Zr(tod)4), oxygen and argon gases is used for deposition. To the best of our knowledge, plasma assisted MOCVD of YSZ films using octanediaonate precursors have not been reported in the literature so far. The deposited films have been characterized by GIXRD, FTIR, XPS, FESEM, AFM, XANES, EXAFS, EDAX and spectroscopic ellipsometry. Thickness of the films has been measured by stylus profilometer while tribological property measurement has been done to study mechanical behavior of the coatings. Characterization by different techniques indicates that properties of the films are dependent on the yttria content as well as on the structure of the films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 355, 15 November 2015, Pages 82-92
نویسندگان
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