کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5365483 1388331 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhanced light output of InGaN LEDs with a roughened p-GaN surface using different TMGa flow rates in p-AlGaN layer
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Enhanced light output of InGaN LEDs with a roughened p-GaN surface using different TMGa flow rates in p-AlGaN layer
چکیده انگلیسی

We have demonstrated the enhancement of light output of InGaN-based blue light-emitting diodes (LEDs) using different trimethylgallium (TMGa) flow rates in the growth of p-AlGaN epilayer to facilitate a rougher p-GaN surface. It is found that higher output power can be achieved from the LEDs with rougher surface morphologies when the TMGa flow rate (RTMGa) is increased up to 60 sccm during p-Al0.05Ga0.95N epilayer growth. Such a rough surface obtained at higher RTMGa is attributed to the fact that the vertical growth rate is faster than the lateral growth rate, thus, leading to the facet of crystal growth focuses mainly in the vertical direction. The output power of devices biased at 20 mA is 15.4, 15.9, 17.5, and 18.9 mW for TMGa flow rates of 10, 20, 40, and 60 sccm, respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 22, 1 September 2010, Pages 6694-6698
نویسندگان
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