کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5359830 | 1388253 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of crystal lattice constant and dislocation density of crack-free GaN films grown on Si(1Â 1Â 1)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
GaN have sphalerite structure (Cubic-GaN) and wurtzite structure (hexagonal GaN). We report the H-GaN epilayer with a LT-AlN buffer layer has been grown on Si(1 1 1) substrate by metal-organic chemical vapor deposition (MOCVD). According to the FWHM values of 0.166° and 14.01 cmâ1 of HDXRD curve and E2 (high) phonon of Raman spectrum respectively, we found that the crystal quality is perfect. And based on the XRD spectrum, the crystal lattice constants of Si (a = 5.3354 Ǻ) and H-GaN (aepi = 3.214 Ǻ, cepi = 5.119 Ǻ) have been calculated for researching the tetragonal distortion of the sample. These results indicate that the GaN epilayer is in tensile strain and Si substrate is in compressive strain which were good agreement with the analysis of Raman peaks shift. Comparing with typical values of screw-type (Dscrew = 7 Ã 108 cmâ2) and edge-type (Dedge = 2.9 Ã 109 cmâ2) dislocation density, which is larger than that in GaN epilayers growth on SiC or sapphire substrates. But our finding is important for the understanding and application of nitride semiconductors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 4, 1 December 2010, Pages 1161-1165
Journal: Applied Surface Science - Volume 257, Issue 4, 1 December 2010, Pages 1161-1165
نویسندگان
Jijun Xiong, Jianjun Tang, Ting Liang, Yong Wang, Chenyang Xue, Weili Shi, Wendong Zhang,