Keywords: رسوبات بخار شیمیایی فلزات; Nucleation islands; Surface morphology; Atomic force microscopy; Metalorganic chemical vapor deposition; Aluminum nitride;
مقالات ISI رسوبات بخار شیمیایی فلزات (ترجمه نشده)
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Keywords: رسوبات بخار شیمیایی فلزات; Low dimensional structures; Metalorganic chemical vapor deposition; Nitrides; Semiconducting III–V materials
Keywords: رسوبات بخار شیمیایی فلزات; AP-XPS; ambient pressure x-ray photoelectron spectroscopy; AR-MSRI; angle resolved mass spectrometry of recoiled ions; DFT; density functional theory; DRS; direct recoil spectroscopy; FTIR; Fourier transform infrared spectroscopy; GGA; generalized gradien
Incorporation of hydrogen into MBE-grown dilute nitride GaInNAsSb layers in a MOCVD growth ambient
Keywords: رسوبات بخار شیمیایی فلزات; Multi-junction solar cell; Dilute nitride; Molecular beam epitaxy; Metalorganic chemical vapor deposition; Hydrogen; Annealing;
AlGaN-based ultraviolet light-emitting diodes on sputter-deposited AlN templates with epitaxial AlN/AlGaN superlattices
Keywords: رسوبات بخار شیمیایی فلزات; Ultraviolet light-emitting diodes; AlN template; Sputtering; Metalorganic chemical vapor deposition; AlGaN;
Double-layer stepped Si(1â¯0â¯0) surfaces prepared in As-rich CVD ambience
Keywords: رسوبات بخار شیمیایی فلزات; Metalorganic chemical vapor deposition; Optical in situ spectroscopy; Si(1â¯0â¯0) surface; Arsenic; III-V-on-silicon;
An X-ray diffraction and Raman spectroscopy investigation of AlGaN epi-layers with high Al composition
Keywords: رسوبات بخار شیمیایی فلزات; AlGaN; Metalorganic chemical vapor deposition; Crystalline quality; Optical property; Raman spectroscopy;
Self-nucleation growth of InSb nanowires based on indium droplets under the assistance of Au nano-particles by MOCVD
Keywords: رسوبات بخار شیمیایی فلزات; Antimonides; Metalorganic chemical vapor deposition; Nanocomposites; Semiconductors;
Growth of high quality N-polar n-GaN on vicinal C-face n-SiC substrates for vertical conducting devices
Keywords: رسوبات بخار شیمیایی فلزات; N-polar GaN; Metalorganic chemical vapor deposition; Vertical conducting; Nitrides;
Heavy p-type carbon doping of MOCVD GaAsP using CBrCl3
Keywords: رسوبات بخار شیمیایی فلزات; Doping; Metalorganic chemical vapor deposition; Gallium arsenide phosphide; Semiconducting III-V materials;
Improved crystal quality of semipolar (101¯3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer
Keywords: رسوبات بخار شیمیایی فلزات; Semipolar GaN; Si(001); Metalorganic chemical vapor deposition;
Controlling the stress of growing GaN on 150-mm Si (111) in an AlN/GaN strained layer superlattice
Keywords: رسوبات بخار شیمیایی فلزات; Stresses; Superlattice; Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials;
Effects of Ga concentration and rapid thermal annealing on the structural, optoelectronic and photoluminescence properties of Ga-doped ZnO thin films
Keywords: رسوبات بخار شیمیایی فلزات; Ga-doped ZnO; Metalorganic chemical vapor deposition; Rapid thermal annealing; Photoluminescence;
Wurtzite Zn1−y(MgxCd1−x)yO quaternary systems for photodiodes in visible spectral range
Keywords: رسوبات بخار شیمیایی فلزات; Characterization; Crystal structure; Metalorganic chemical vapor deposition; Alloys; Semiconducting quaternary alloys; Heterojunction semiconductor devices
Investigation on orientation, epitaxial growth and microstructure of a-axis-, c-axis-, (103)/(110)- and (113)-oriented YBa2Cu3O7âδ films prepared on (001), (110) and (111) SrTiO3 single crystal substrates by spray atomizing and coprecipitating laser ch
Keywords: رسوبات بخار شیمیایی فلزات; Chemical vapor deposition processes; Superconducting materials; Laser epitaxy; Metalorganic chemical vapor deposition;
Crack-free Si-doped n-AlGaN film grown on sapphire substrate with high-temperature AlN interlayer
Keywords: رسوبات بخار شیمیایی فلزات; Crystalline quality; Metalorganic chemical vapor deposition; Semiconductors; n-AlGaN films; Optical properties
Structural, electrical, and optical properties of CoxNi1-xO films grown by metalorganic chemical vapor deposition
Keywords: رسوبات بخار شیمیایی فلزات; Doping; X-ray diffraction; Metalorganic chemical vapor deposition; Metals; Oxides; Semiconducting materials
The impact of graphene properties on GaN and AlN nucleation
Keywords: رسوبات بخار شیمیایی فلزات; Graphene; GaN; AlN; Nucleation; Metalorganic chemical vapor deposition; Epitaxy;
Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition
Keywords: رسوبات بخار شیمیایی فلزات; Carbon impurity; Metalorganic chemical vapor deposition; High-resistance gallium nitride; High electron mobility transistors;
The novel chamber hardware design to improve the thin film deposition quality in both 12â³ (300Â mm) and 18â³ (450Â mm) wafers with the development of 3D full chamber modeling and experimental visual technique
Keywords: رسوبات بخار شیمیایی فلزات; Computer simulation; Convection; Fluid flows; Metalorganic chemical vapor deposition; Gallium compounds; Semiconducting gallium arsenide;
Nonpolar a-GaN epilayers with reduced defect density using patterned r-plane sapphire substrates
Keywords: رسوبات بخار شیمیایی فلزات; Planar defects; Crystal structure; Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials;
Microstructural characterization and formation mechanism of 21° top facets of ZnO-based nanowall structures
Keywords: رسوبات بخار شیمیایی فلزات; Crystal structure; Nanostructures; Metalorganic chemical vapor deposition; Zinc compounds; Transmission electron microscopy; Atomic modeling
Cubic GaN layers grown by metalorganic chemical vapor deposition on GaN templates obtained by nitridation of GaAs
Keywords: رسوبات بخار شیمیایی فلزات; Cubic gallium nitride; Metalorganic chemical vapor deposition; X-ray diffraction;
Stability increase of fuel clad with zirconium oxynitride thin film by metalorganic chemical vapor deposition
Keywords: رسوبات بخار شیمیایی فلزات; Fuel-clad chemical interaction; Metalorganic chemical vapor deposition; Zirconium oxynitride; Thin films; Auger photoelectron spectroscopy; Scanning electron microscopy;
Classification of stacking faults and dislocations observed in nonpolar a-plane GaN epilayers using transmission electron microscopy
Keywords: رسوبات بخار شیمیایی فلزات; 61.72.Ff; 68.37.Lp; 81.05.Ea; 81.15.Gh; Defects; Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials;
Defect structure originating from threading dislocations within the GaN film grown on a convex patterned sapphire substrate
Keywords: رسوبات بخار شیمیایی فلزات; Metalorganic chemical vapor deposition; GaN; Transmission electron microscopy; Laser confocal scanning microscopy
Spatial stress distribution and optical properties of GaN films grown on convex shape-patterned sapphire substrate by metalorganic chemical vapor deposition
Keywords: رسوبات بخار شیمیایی فلزات; 71.55.Eq; 78.30 Fs; 78.47jd; 78.55Cr; 81.15.GhGaN; Metalorganic chemical vapor deposition; Convex-shaped patterned sapphire; Micro-Raman scattering; Micro-photoluminescence
Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure
Keywords: رسوبات بخار شیمیایی فلزات; GaN; Light-emitting diodes; Nitride; InGaN-GaN MQW; Metalorganic chemical vapor deposition;
AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications
Keywords: رسوبات بخار شیمیایی فلزات; III–V semiconductors; Chemical vapor deposition; Metalorganic chemical vapor deposition; High electron mobility transistors
High-growth rate YSZ thermal barrier coatings deposited by MOCVD demonstrate high thermal cycling lifetime
Keywords: رسوبات بخار شیمیایی فلزات; Yttria-stabilized zirconia; Metalorganic chemical vapor deposition; Thermal barrier coating; Butoxide precursor; Aerosol-assisted liquid delivery;
Characterization of crystal lattice constant and dislocation density of crack-free GaN films grown on Si(1Â 1Â 1)
Keywords: رسوبات بخار شیمیایی فلزات; 87.85.Va; 81.05.Ea; 81.15.Gh; 78.35.+c; 61.05.Câ; Metalorganic chemical vapor deposition; Semiconducting III-V materials; AFM; X-ray diffraction; Defects;
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
Keywords: رسوبات بخار شیمیایی فلزات; InGaN; Dislocation; Metalorganic chemical vapor deposition; High resolution X-ray diffraction; Cathodoluminescence
Nitride-based blue light-emitting diodes with multiple MgxNy/GaN buffer layers
Keywords: رسوبات بخار شیمیایی فلزات; Dislocation; Multiple MgxNy–GaN buffer layers; Light-emitting diodes; Nitride; Metalorganic chemical vapor deposition
Photoluminescence, photoacoustic and Raman spectra of zinc oxide films grown by LP-MOCVD using diethylzinc and water as precursors
Keywords: رسوبات بخار شیمیایی فلزات; Zinc oxide; Metalorganic chemical vapor deposition; Photoluminescence; Photoacoustic spectroscopy; Raman spectroscopy
Growth of BxGa1−xAs, BxAl1−xAs and BxGa1−x−yInyAs epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition
Keywords: رسوبات بخار شیمیایی فلزات; Metalorganic chemical vapor deposition; Triethylboron; BGaAs; BAlAs; BGaInAs; MQW
Effect of embedding a porous medium on the deposition rate in a vertical rotating MOCVD reactor based on CFD modeling
Keywords: رسوبات بخار شیمیایی فلزات; Metalorganic chemical vapor deposition; Computational fluid dynamics; Porous medium;
High quality p-type ZnO films grown by low pressure plasma-assisted MOCVD with N2O rf plasma doping source
Keywords: رسوبات بخار شیمیایی فلزات; Photoluminescence; Metalorganic chemical vapor deposition; Zinc oxide films; p-type doping; Light-emitting devices
LP-MOCVD growth of ternary BxGa1−xAs epilayers on (0 0 1)GaAs substrates using TEB, TMGa and AsH3
Keywords: رسوبات بخار شیمیایی فلزات; Metalorganic chemical vapor deposition; BGaAs; GaAs; Triethylboron
GaN on Si-rich SiNx-coated sapphire at different growth stages: The surface morphologies and optical properties
Keywords: رسوبات بخار شیمیایی فلزات; 81.40.-z; 81.15.Gh; 81.05.Ea; 68.55.-a; 68.55.AcSi-rich SiNx treatment; GaN; Metalorganic chemical vapor deposition; Surface morphology; Photoluminescence
Temperature-controlled self-organized InP nanostructures grown on GaAs(1 0 0) substrate by MOCVD
Keywords: رسوبات بخار شیمیایی فلزات; 64.70.Nd; 68.37.Ps; 81.16.DnNanostructure; Atomic force microscopy; Diffusion; Metalorganic chemical vapor deposition; InP-on-GaAs
Effect of AlN buffer thickness on stress relaxation in GaN layer on Si (1 1 1)
Keywords: رسوبات بخار شیمیایی فلزات; Stress; Crack; Silicon (1 1 1); AlN buffer; Metalorganic chemical vapor deposition
Effect of Si doping on the photoluminescence properties of AlGaInP/GaInP multiple quantum wells
Keywords: رسوبات بخار شیمیایی فلزات; 81.15.Gh; 78.55.Cr; 61.72.VvQuantum well; AlGaInP; Metalorganic chemical vapor deposition; Photoluminescence
Structural and optical properties of an InxGa1âxN/GaN nanostructure
Keywords: رسوبات بخار شیمیایی فلزات; Metalorganic chemical vapor deposition; InxGa1âxN/GaN; X-ray reflectivity; Photoluminescence; Atomic force microscopy; Ellipsometry;
Transverse recirculations in low Reynolds number mixed convective gas flow over a model heated substrate
Keywords: رسوبات بخار شیمیایی فلزات; Convection; Fluid flows; Metalorganic chemical vapor deposition
Low-temperature MOVPE growth of ZnO thin films by using a buffer layer
Keywords: رسوبات بخار شیمیایی فلزات; 61.10.N; 81.15.Kk; 68.55; 73.61.G; 78.66.H; Crystal structure; Characterization; Metalorganic chemical vapor deposition; Zinc compounds;
p-Type conduction in phosphorus-doped ZnO thin films by MOCVD and thermal activation of the dopant
Keywords: رسوبات بخار شیمیایی فلزات; 61.72.V; 72.80.E; 73.61.G; 78.66.H; p-Type conduction; Doping; Metalorganic chemical vapor deposition; Zinc compounds; Semiconducting II-VI materials;
Crack control in GaN grown on silicon (1Â 1Â 1) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
Keywords: رسوبات بخار شیمیایی فلزات; 68.55.âa; 78.55.Cr; 81.15.Gh; In doping; Cracks; Si(1Â 1Â 1) substrate; LT-AlGaN interlayer; Metalorganic chemical vapor deposition; GaN;
Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition
Keywords: رسوبات بخار شیمیایی فلزات; Characterization; Crystal structure; Segregation; Metalorganic chemical vapor deposition; Nitrides; GaN; InGaN; Photoluminescence; MOCVD; Phase separation
Alloying, co-doping, and annealing effects on the magnetic and optical properties of MOCVD-grown Ga1âxMnxN
Keywords: رسوبات بخار شیمیایی فلزات; Doping; Metalorganic chemical vapor deposition; Magnetic materials; Semiconducting compounds;
High-resolution TEM characterization of MOVPE-grown (1Â 1Â 1)-BP layer on hexagonal 6H (0Â 0Â 0Â 1)-SiC
Keywords: رسوبات بخار شیمیایی فلزات; 61.16.Bg; 61.72.Nn; 68.55.âa; Characterization; Metalorganic chemical vapor deposition; III-V Semiconductors;